High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al_(2)O_(3)/HfO_(2) Dielectrics  

作　　者：Yue Li Li Zhu Chunsheng Chen Ying Zhu Changjin Wan Qing Wan 李玥;朱力;陈春生;祝影;万昌锦;万青(School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China)

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2022年第11期68-71,共4页中国物理快报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant Nos.2019YFB2205400 and 2021YFA1200051);the National Natural Science Foundation of China(Grant No.62074075)。

摘　　要：High-performance amorphous indium-gallium-zinc-oxide thin-film transistors(a-IGZO TFTs)gated by AlO/HfOstacked dielectric films are investigated.The optimized TFTs with AlO(2.0 nm)/HfO(13 nm)stacked gate dielectrics demonstrate the best performance,including low total trap density Nt,low subthreshold swing voltage,large switching ratio I/,high mobilityμ,and low operating voltage,equal to 1.35×10cm,88 mV/dec,5.24×10~8,14.2 cm~2/V·s,and 2.0 V,respectively.Furthermore,a low-voltage-operated resistor-loaded inverter has been fabricated based on such an a-IGZO TFT,showing ideal full swing characteristics and high gain of~27 at 3.0 V.These results indicate a-IGZO TFTs gated by optimized AlO/HfOstacked dielectrics are of great interests for low-power,high performance,and large-area display and emerging electronics.High-performance amorphous indium-gallium-zinc-oxide thin-film transistors(a-IGZO TFTs)gated by Al_(2)O_(3)/HfO_(2) stacked dielectric films are investigated.The optimized TFTs with Al_(2)O_(3)(2.0 nm)/HfO_(2)(13 nm)stacked gate dielectrics demonstrate the best performance,including low total trap density Nt,low subthreshold swing voltage,large switching ratio ION/OFF,high mobilityμFE,and low operating voltage,equal to 1.35×10^(12)cm^(-2),88 mV/dec,5.24×10^(8),14.2 cm^(2)/V·s,and 2.0 V,respectively.Furthermore,a low-voltage-operated resistor-loaded inverter has been fabricated based on such an a-IGZO TFT,showing ideal full swing characteristics and high gain of~27 at 3.0 V.These results indicate a-IGZO TFTs gated by optimized Al2O3/HfO2stacked dielectrics are of great interests for low-power,high performance,and large-area display and emerging electronics.

关 键 词：ZINC inverter performance 

分 类 号：TN321.5[电子电信—物理电子学]