Ce∶LuAG闪烁晶体的生长研究  

Growth Study of Ce∶LuAG Scintillation Crystal

作　　者：张雅丽 权纪亮 刘纪岸 刘军 黄晋强 ZHANG Yali;QUAN Jiliang;LIU Ji’an;LIU Jun;HUANG Jinqiang(Guangzhou Semiconductor Materials Research Institute,Guangzhou 510610,China)

机构地区：[1]广州半导体材料研究所,广州510610

出　　处：《人工晶体学报》2022年第12期2003-2008,2030,共7页Journal of Synthetic Crystals

基　　金：广州市科技计划(202102080585)。

摘　　要：Ce∶LuAG晶体是一种性能优良的闪烁材料,但采用提拉法生长Ce∶LuAG时,经常出现开裂和包裹物缺陷。本文通过理论与实践相结合的方式分析了温度梯度、提拉速度、晶体旋转速度和热应变等因素对晶体产生缺陷的影响,并提出了解决办法,给出了适合生长优质Ce∶LuAG晶体的工艺参数:熔体上方温度梯度在5℃/mm左右,放肩角度在30°~60°,提拉速度1.0~1.5 mm/h,晶体旋转速度15~25 r/min。最后成功生长出直径30 mm、等径长50 mm质量较为完好的Ce∶LuAG单晶,晶体内核心面积小。Ce∶LuAG crystal is an excellent scintillation material,but cracking and inclusion defects often occur when Ce∶LuAG is grown by Czochralski method.In this paper,the effects of temperature gradient,pulling speed,rotation speed and thermal strain on crystal defects were analyzed by combining theory with practice,and the solution was put forward.The suitable technological parameters for growing Ce∶LuAG crystal with high quality are given:the temperature gradient above the melt is about 5℃/mm,the shoulder angle is 30°~60°,the pulling speed is 1.0~1.5 mm/h,and the crystal rotation speed is 15~25 r/min.Finally,good quality of Ce∶LuAG single crystal with a diameter of 30 mm and an equal diameter length of 50 mm is successfully grown,and the crystal core area is small.

关 键 词：Ce∶LuAG 闪烁晶体 提拉法 生长 开裂 

分 类 号：O77[理学—晶体学]