TOPCon太阳电池发射极Al_(2)O_(3)/SiNx与SiO_(2)/Al_(2)O_(3)/SiNx叠层膜钝化性能的比较  被引量:1

Comparative Study on Passivation Performance of Al_(2)O_(3)/SiNx and SiO_(2)/Al_(2)O_(3)/SiNx Stacked Films for Emitter of TOPCon Solar Cells

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作  者:杨露 刘大伟 张婷 魏凯峰 石慧君 YANG Lu;LIU Dawei;ZHANG Ting;WEI Kaifeng;SHI Huijun(Xi’an Solar Power Branch of Qinghai Huanghe Hydropower Development Co.,Ltd.,Xi’an 710000,China)

机构地区:[1]青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安710000

出  处:《人工晶体学报》2022年第12期2090-2095,共6页Journal of Synthetic Crystals

摘  要:本文对TOPCon电池发射结的叠层钝化膜进行了研究,对比了3种不同叠层钝化膜(SiO_(2)/SiNx、Al_(2)O_(3)(1.5 nm)/SiNx、SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNx)的钝化性能。结果表明:Al_(2)O_(3)(1.5 nm)/SiNx的钝化性能优于SiO_(2)/SiNx,SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNx的钝化水平最佳,隐开路电压均值可达到705 mV。基于Al_(2)O_(3)/SiNx叠层膜研究了Al_(2)O_(3)厚度(1.5 nm、3 nm和5 nm)对钝化性能和电池转换效率的影响。当Al_(2)O_(3)厚度由1.5 nm增加到3 nm时,钝化性能得到明显提升,隐开路电压均值提高了20 mV,达到707 mV,对应电池的光电转换效率升高了0.23个百分点,与SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNx叠层膜电池的转换效率持平。然而,当Al_(2)O_(3)厚度继续增加至5 nm时,隐开路电压均值保持不变。因此可以使用Al_(2)O_(3)(3 nm)/SiNx叠层膜代替SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNx叠层膜,不仅简化了电池的工艺步骤,而且降低了生产成本。The stacked passivation films for emitter of TOPCon solar cells were investigated in the paper. The passivation performance of three different stacked films(SiO_(2)/SiNx, Al_(2)O_(3)(1.5 nm)/SiNx, SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNx) were compared. The results show that the Al_(2)O_(3)(1.5 nm)/SiNxfilms exhibit better passivation performance than that of the SiO_(2)/SiNxfilms, and the SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNxfilms perform the best, with an implied open circuit voltage of 705 mV. Based on the Al_(2)O_(3)/SiNxstacked passivation films, the effect of Al_(2)O_(3)thickness(1.5 nm, 3 nm and 5 nm) on the passivation performance and photoelectric conversion efficiency of cells were investigated. When the thickness of Al_(2)O_(3)increases from 1.5 nm to 3 nm, the passivation performance is significantly improved, the mean value of the implied open circuit voltage increases by 20 mV to 707 mV, and the conversion efficiency of the corresponding cells increases by 0.23 percentage point, which is comparable to that of the SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNxstacked films cells. However, when the thickness of Al_(2)O_(3)continues to increase to 5 nm, the mean value of the implied open circuit voltage remains unchanged. Therefore, Al_(2)O_(3)(3 nm)/SiNxstacked films can be used to replace the SiO_(2)/Al_(2)O_(3)(1.5 nm)/SiNxstacked films, which not only simplifies the process flow of the solar cells, but also reduces the production cost.

关 键 词:TOPCon电池 表面钝化 三氧化二铝 Al_(2)O_(3)/SiNx叠层钝化膜 钝化性能 隐开路电压 

分 类 号:TM914.[电气工程—电力电子与电力传动]

 

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