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作 者:张永刚[1,2] 顾溢 马英杰 邵秀梅[1,2] 李雪[1,2] 龚海梅[1,2] 方家熊[1,2] ZHANG Yong-Gang;GU Yi;MA Ying-Jie;SHAO Xiu-Mei;LI Xue;GONG Hai-Mei;FANG Jia-Xiong(State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
机构地区:[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083
出 处:《红外与毫米波学报》2022年第6期941-950,共10页Journal of Infrared and Millimeter Waves
基 金:Supported by National Natural Science Foundation of China(62175250,62075229,62274169 and 62104238);the Program of Shanghai Academic/Technology Research Leader(21XD1404200);the International Science and Technology Cooperation Program of Shanghai(20520711200)。
摘 要:三五族化合物半导体具有丰富的特性,使其在电子学、光电子学以及光子学领域获得了各种应用,这些都源自于三族元素和五族元素构成之二元系的各种魔幻组合形成的多变特性。本文基于二元系砷化物、磷化物及锑化物,对其构成的各种三元系、四元系和五元系的特征进行了几何图示阐述,主要涉及其带隙、晶格常数及其与不同衬底的晶格匹配区域。对氮化物和稀氮、铋化物和稀铋以及硼化物的一些特性也进行了简要讨论。通过对整个三五族化合物半导体的全面了解将有助于深入了解其潜力和可持续发展态势,包括存在的诸多挑战。III-V compound semiconductors have abundant features for various electronic,optoelectronic and photonic applications,all arise from variform magic combination of group III and group V elements formed binaries,resulting in ever-changing characteristics.In this paper,diversified ternaries,quaternaries and quinaries are presented geometrically based on the binaries of arsenide,phosphide and antimonide,mainly concerned of their bandgap,lattice constant and the lattice match domain on different substrates.The features of nitride and dilute nitride,bismide and dilute bismuth,as well as boride,are also discussed briefly.An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development,along with a lot of challenges.
关 键 词:三五族化合物半导体 二元系 三元系 四元系 五元系
分 类 号:TN2[电子电信—物理电子学]
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