基于梯度能带结构的高速非制冷中波红外HgCdTe探测器  

High speed uncooled MWIR infrared HgCdTe photodetector based on graded bandgap structure

作　　者：桑茂盛 徐国庆[1] 乔辉[1] 李向阳[1] SANG Mao-Sheng;XU Guo-Qing;QIAO Hui;LI Xiang-Yang(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2022年第6期972-979,共8页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Key Research and Development Program of China(2021YFA0715501)。

摘　　要：报道了基于梯度能带结构的高速室温中波红外HgCdTe器件,器件设计为n-on-p同质结结构,在300 K的零偏压条件下达到了1.33 ns(750 MHz)的总的响应时间,相对于非制冷的碲镉汞器件和工作于高偏压下的碲镉汞APD器件响应速度有所提高。基于一维模型的分析表明,吸收层中的组分梯度可以形成内置电场并改变了载流子的输运特性,该模型由不同组分梯度的HgCdTe器件的实验对比验证。因此,此项工作优化了高速HgCdTe中波红外探测器的设计,并为设计超快中波红外光电探测器提供了一种可行的思路。A high-speed room-temperature mid-wave infrared HgCdTe photodetector based on graded bandgap structure was reported.This study explores a n-on-p homojunction structure on epitaxial HgCdTe,which achieves a total response time of 1.33 ns(750 MHz)under zero bias voltage at 300 K,which is faster than commercial uncooled MCT photovoltaic photodetectors and MWIR HgCdTe APDs under high reverse bias.The analysis based on one-dimensional equations shows that compositional grading in the absorber layer can form built-in electric field and the transport mechanism of carriers is changed,the model is confirmed by the comparisons of different graded HgCdTe photodetectors.Thereby,this work facilitates design of the high-speed HgCdTe MWIR detectors,and provides a promising method to optimize the ultrafast MWIR infrared photodetectors.

关 键 词：碲镉汞 高速 中波红外 组分梯度 

分 类 号：TN215[电子电信—物理电子学]