基于90 nm InP HEMT工艺的220 GHz功率放大器设计  

Design of 220 GHz power amplifier based on 90 nm InP HEMT process

作　　者：陈艳 孟范忠[1] 方园[1] 张傲 高建军[2] CHEN Yan;MENG Fan-Zhong;FANG Yuan;ZHANG Ao;GAO Jian-Jun(The 13th Research Institute,CETC,Shijiazhuang 050051,China;School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]华东师范大学物理与电子科学学院,上海200241

出　　处：《红外与毫米波学报》2022年第6期1037-1041,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(62034003)。

摘　　要：基于90 nm InP HEMT工艺,设计了一款220 GHz功率放大器太赫兹单片集成电路,该放大器采用片上威尔金森功分器结构实现了两路五级共源放大器的功率合成。在片测试结果表明,200~230 GHz频率范围内,功率放大器小信号增益平均值18 dB。频率为210~230 GHz范围内该MMIC放大器饱和输出功率优于15.8 mW,在223 GHz时最高输出功率达到20.9 mW,放大器芯片尺寸为2.18 mm×2.40 mm。Based on the 90 nm InP HEMT process,a 220 GHz power amplifier terahertz integrated circuit design(TMIC)is designed.The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers.The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB.The power test results show that the saturated output power of the power amplifier is better than 15.8 mW from 210 GHz to 230 GHz,with a maximum output power of 20.9 mW at 223 GHz.The size of the TMIC chip is 2.18 mm×2.40 mm.

关 键 词：铟磷高电子迁移率晶体管(InP HEMT) 功率放大器(PA) 太赫兹集成电路(TMIC) 

分 类 号：O43[机械工程—光学工程]