基于单边带时间调制的CMOS有源移相器设计  

Design of CMOS active phase shifter based on single-sideband time-modulation

作　　者：程国枭 吴文[1] 张金栋[1] 陈峤羽 CHENG Guoxiao;WU Wen;ZHANG Jindong;CHEN Qiaoyu(Nanjing University of Science and Technology,Nanjing 210094,China)

机构地区：[1]南京理工大学,南京210094

出　　处：《电波科学学报》2022年第6期962-968,共7页Chinese Journal of Radio Science

基　　金：国家自然科学基金(62104109);微波毫米波单片集成和模块电路重点实验室基金(614280303022006)。

摘　　要：为满足低成本相控阵对高精度波束扫描的需求,提出了一种基于单边带时间调制(single-sideband time-modulation,STM)的CMOS有源移相器.基于Global Foundries 0.13μm CMOS工艺,设计了双相调制单元用于I路和Q路的0°/180°移相,以抑制时间调制所产生的基频和偶次边带;设计了矢量合成与复用放大单元,在不增加功耗的前提下提高了整个电路增益;设计了偏置与时序控制单元,通过对I路和Q路增益的时序控制,实现了STM.仿真结果表明:本设计在1.8 V电源电压下的功耗为15.8 mW,在3-dB带宽(13.2~20.7 GHz)内的增益为−3±1.5 dB;在10~25 GHz频段内,实现了小于0.1°的移相偏差均方根(root mean square,RMS)和小于0.02 dB的增益偏差RMS,相位分辨率达10 bit以上;最大无用边带(−7次边带)的功率抑制比为16.7 dBc.该有源移相器具有低成本、低功耗、低相位偏差、低幅度偏差和低插入损耗等性能,为时间调制阵列提供了一种新颖的单元结构.To meet the requirement of low-cost phased array for high-precision beam scanning,the design of CMOS active phase shifter based on single-sideband time-modulation(STM)is proposed in this paper.Based on Global Foundries 0.13μm CMOS process,a bi-phase modulator is designed for 0°/180°phase shifting of I/Q channels to suppress the fundamental frequency and even-order sidebands from time modulation.A vector synthesis stage followed by a current-reused amplifying stage is designed to improve the gain without increasing power consumption.The bias and timing control units are designed to realize the STM by the timing control of the gains of I/Q channels.The simulation results show that the total power consumption is 15.8 mW from the 1.8 V supply,and its gain is−3±1.5 dB in the 3-dB bandwidth(13.2−20.7 GHz).In the frequency band of 10−25 GHz,the root mean square(RMS)phase error is less than 0.1°,the RMS gain error is less than 0.02 dB,and the phase resolution can reach more than 10 bits.The maximum unwanted sideband(−7th sideband)has a power rejection ratio of 16.7 dBc.The proposed active phase shifter has the properties of low cost,low power consumption,low phase and gain errors and low insertion loss,which provides a novel topology for the time-modulated array.

关 键 词：相控阵 单边带时间调制(STM) CMOS 有源 移相器 

分 类 号：TN432[电子电信—微电子学与固体电子学]