Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga_(2)O_(3)/p-diamond heterojunction  被引量:1

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作  者:Wang Lin Ting-Ting Wang Qi-Liang Wang Xian-Yi Lv Gen-Zhuang Li Liu-An Li Jin-Ping Ao Guang-Tian Zou 林旺;王婷婷;王启亮;吕宪义;李根壮;李柳暗;敖金平;邹广田(State Key Laboratory of Superhard Material,College of Physics,Jilin University,Changchun 130012,China;Shenzhen Research Institute,Jilin University,Shenzhen 518057,China;National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi’an 710071,China)

机构地区:[1]State Key Laboratory of Superhard Material,College of Physics,Jilin University,Changchun 130012,China [2]Shenzhen Research Institute,Jilin University,Shenzhen 518057,China [3]National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi’an 710071,China

出  处:《Chinese Physics B》2022年第10期120-125,共6页中国物理B(英文版)

基  金:Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001);the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886)。

摘  要:A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

关 键 词:DIAMOND Schottky barrier diode junction terminal extension simulation 

分 类 号:TN311.7[电子电信—物理电子学]

 

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