Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier  

作　　者：Yinzhe Liu Kewei Liu Jialin Yang Zhen Cheng Dongyang Han Qiu Ai Xing Chen Yongxue Zhu Binghui Li Lei Liu Dezhen Shen 刘寅哲;刘可为;杨佳霖;程祯;韩冬阳;艾秋;陈星;朱勇学;李炳辉;刘雷;申德振(State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第10期256-260,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335);the National Ten Thousand Talent Program for Young Topnotch Talents,the Key Research and Development Program of Changchun City(Grant No.21ZY05);the 100 Talents Program of the Chinese Academy of Sciences,Youth Innovation Promotion Association,CAS(Grant No.2020225);Jilin Province Science Fund(Grant No.20210101145JC);XuGuang Talents Plan of CIOMP。

摘　　要：One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.

关 键 词：ZnO microwire INTERFACE potential barrier dark current photocurrent-to-dark current ratio 

分 类 号：TN23[电子电信—物理电子学]