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作 者:Yali Yu Tao Xiong Zhengfeng Guo Shijun Hou Juehan Yang Yue-Yang Liu Honggang Gu Zhongming Wei
机构地区:[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science and Technology,Wuhan 430074,China
出 处:《Fundamental Research》2022年第6期985-992,共8页自然科学基础研究(英文版)
基 金:the National Natural Science Foundation of China(62125404);Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000).
摘 要:Tin selenide(SnSe)has attracted considerable interest recently on account of its low-symmetry lattice structure,great compatibility with key semiconductor technology,and remarkable electrical and optical performance.SnSe-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric performance.Here,an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy(ARPRS),polarization-resolved optical microscopy(PROM),angle-resolved optical absorption spectroscopy(AROAS),and other crystal structure characterization methods.Moreover,SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio(2.31 at 1064 nm)due to the structure formed by the Van der Waals superposition of covalently bonded atomic layers.Furthermore,SnSe-based photodetectors have high responsivity(9.27 A/W),high detectivity(4.08×10^(10)Jones),and fast response(in the order of nanoseconds).These results suggest a new method for fabricating 2D fast-response polarization-sensitive photodetectors in the future.
关 键 词:Layered SnSe In-plane anisotropy Polarization-sensitive photodetector Fast response Wide spectrum
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