检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李双园 刘思思[2] 张重建 张建兵 杨晔 LI Shuangyuan;LIU Sisi;ZHANG Chongjian;ZHANG Jianbing;YANG Ye(State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China;School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China)
机构地区:[1]厦门大学化学化工学院,固体表面物理化学国家重点实验室,福建厦门361005 [2]华中科技大学光学与电子信息学院,湖北武汉430074
出 处:《厦门大学学报(自然科学版)》2023年第1期39-44,共6页Journal of Xiamen University:Natural Science
基 金:国家自然科学基金(21973078)。
摘 要:近年来,铅系量子点(如PbX,X=S,Se,Te)薄膜光物理性质的研究表明该材料在下一代柔性光电器件中存在潜在应用价值.理解量子点薄膜中载流子输运机制对于发展此类器件至关重要.利用超快瞬态吸收光谱技术,对PbS量子点薄膜中由于载流子输运导致的激子漂白峰位移做了系统性研究.结果发现在高带隙激发条件下,激子漂白峰随延时往低能方向移动,即发生红移.进一步通过分析光谱位移速率和幅值与温度的依赖关系,基于热激活隧穿输运模型揭示了PbS量子点薄膜中的载流子输运机制为电荷隧穿.Due to its great potential in the flexible optoelectronic application,theⅣ-Ⅵquantum dot(such as PbX,X=S,Se,Te)films have attracted intense research interests recently.Understanding the charge carrier transport mechanism in quantum dot films is essential to optimize the performance of the device.In this paper,we systematically investigated exciton bleach shifting due to charge carrier transport in PbS quantum dot films using ultrafast transient absorption spectroscopy.We found that the exciton bleach shifted towards the lower energy side,i.e.,red-shifts,as the delay increased under a super-bandgap excitation condition.By further investigating the dependence of spectral shifting rates and magnitudes on temperature,we successfully interpreted that the charge carrier transport mechanism was charge tunneling based on the thermal activation tunneling model.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15