微带结构的高增益低噪声放大器的设计  

Design of high-gain LNA with microstrip structure

作　　者：王昌皓 熊祥正[1] WANG Changhao;XIONG Xiangzheng(Southwest Jiaotong University,Chengdu 610031,China)

机构地区：[1]西南交通大学,四川成都610031

出　　处：《现代电子技术》2023年第3期167-172,共6页Modern Electronics Technique

摘　　要：低噪声放大器是射频收发系统中常用且重要的核心器件,但是低噪放的匹配问题在高频段内往往得不到很好的解决。为实现低噪放在较高频段内还能有良好的输入输出及级间匹配,文中将此前几乎没有应用到低噪放匹配领域的并联匹配枝节和高低阻抗两种匹配网络结构创新性地应用到低噪放的输入输出匹配中,并通过ADS仿真软件对两种结构进行性能分析和对比,最终确定并联枝节匹配网络性能更佳。后选取NEC公司生产的NE3511S02晶体管,最终设计了一款双级低噪声放大器,其主要工作频率在8.5~11.5 GHz,增益高达25.5 dB,增益平坦度在±1.5 dB以内,低噪声低于0.6 dB,输入输出驻波比均小于1.9。此外,将该低噪放的尺寸参数进行一定程度的调整,最终参数波动不大,证明了该低噪声放大器具有良好的稳定性,符合实用要求。Low-noise amplifiers(LNA)are important core components commonly used in RF transceiver systems,but its matching problem has not been well resolved in high frequency bands.In order to achieve good in-out and inter-stage matching of LNA in high-frequency bands,the parallel matching branch and high-low impedance matching network structures that have hardly been applied to the field of LNA matching are used in the in-out matching of LNA innovatively in this paper.The performance of the two structures are analyzed and compared with the ADS simulation software.It is finally determined that the performance of the parallel branch matching network is better.And then,the NE3511S02 transistor produced by NEC company is selected,and a dual stage low-noise amplifier is designed,whose operating frequency is 8.5~11.5 GHz,gain is as high as25.5 dB,gain flatness is within±1.5 dB,low noise is lower than 0.6 dB,and in-out VSWR is less than 1.9.The size parameters of the LNA are adjusted to a certain extent.The results of simulation and comparison prove that the parameter fluctuation of the LNA is not large,and it has good stability and can meet the practical requirements.

关 键 词：低噪声放大器 稳定性分析 匹配网络设计 偏置电路设计 并联枝节匹配 误差分析 

分 类 号：TN710-34[电子电信—电路与系统]