多层瓷介高压电容器空洞缺陷引起的畸变电场有限元分析  

Finite element analysis of distorted electric field caused by cavitydefects in multilayer ceramic high voltage capacitors

作　　者：梁栋程[1] 王淑杰[1] 季航 LIANG Dongcheng;WANG Shujie;JI Hang(Metrology and Testing Center,China Academy of Engineering Physics,Mianyang 621999,Sichuan Province,China)

机构地区：[1]中国工程物理研究院计量测试中心,四川绵阳621999

出　　处：《电子元件与材料》2022年第12期1374-1379,共6页Electronic Components And Materials

摘　　要：为分析多层瓷介高压电容器因空洞缺陷引起畸变电场的影响趋势以及引发电击穿的机制,根据麦克斯韦边值关系理论,利用有限元仿真分析了空洞大小和不同介电常数对畸变电场的影响趋势。结果表明,畸变电场随空洞的增大呈幂函数增长趋势,介电常数的增大也会导致畸变电场增大,但会逐渐趋于平稳,畸变电场最多能达到均匀场强区域的1.4倍,因此,空洞大小是导致畸变电场增加的主要影响因素。利用能带理论对畸变电场引发电击穿的机制进行了解释。分析结果对进一步研究空洞缺陷影响电介质材料击穿性能的机制,以及根据实际应用需求研究制定不同种类电介质材料空洞缺陷大小的量化判据有一定参考意义。To understand the effect of void-induced distorted electric field and its impact on electrical breakdown in multilayer ceramic high-voltage capacitor,finite element simulation was used to analyze how void size and dielectric constants affect the distorted electric field by using Maxwell’s equations and boundary conditions.The results show that the distorted electric field is a monotonically increasing power function of void size.Distorted electric field also increases with dielectric constant and gradually reach a saturation value,which could reach up to 1.4 times value of the uniform field region.Therefore,the void size is the main factor that leads to the increased distorted electric field.Band theory was used to explain the distorted-electric-field-induced electrical breakdown.The results have certain reference significance for further study on void-induced breakdown of dielectric materials,which could help determine quantitative criteria of void size for different dielectric materials in practical applications.

关 键 词：畸变电场 麦克斯韦边值关系 有限元 空洞 介电常数 能带理论 

分 类 号：TB321[一般工业技术—材料科学与工程]