Si_(3)N_(4)陶瓷球研磨轨迹分析及其对表面质量的影响机制  

Analysis on Lapping Trajectory of Si_(3)N_(4)Ceramic Ball and Its Effect Mechanism for Surface Quality

作　　者：孙健[1] 陈伟 姚金梅[1] 李颂华[1,2] 田军兴 SUN Jian;CHEN Wei;YAO Jin-mei;LI Song-hua;TIAN Jun-xing(School of Mechanical Engineering,Shenyang Jianzhu University,Shenyang 110168,China;National-Local Joint Engineering Laboratory of NC Machining Equipment and Technology of High-Grade Stone,Shenyang Jianzhu University,Shenyang 110168,China)

机构地区：[1]沈阳建筑大学机械工程学院,沈阳110168 [2]沈阳建筑大学高档石材数控加工装备与技术国家地方联合工程实验室,沈阳110168

出　　处：《表面技术》2023年第1期253-265,共13页Surface Technology

基　　金：国家自然科学基金(52105196);辽宁省教育厅资助项目(LJKMZ20220936);沈阳市中青年科技创新人才支持计划(RC210343)。

摘　　要：目的明确在相同的研磨液配比、磨料类型,不同的研磨盘转速、研磨装置施加的载荷、磨粒粒径下,陶瓷球研磨轨迹对陶瓷球表面质量的影响,确定锥形研磨法加工的氮化硅陶瓷球的最优研磨参数,提高陶瓷球的表面质量。方法首先建立研磨盘和氮化硅陶瓷球的相对运动模型,利用MATLAB模拟不同研磨参数的下氮化硅陶瓷球的研磨轨迹,分析得到研磨参数和研磨轨迹的变化关系;再利用锥形研磨装置进行单因素实验验证,参与实验的3个变量设定为磨粒型号(粒径)、研磨盘转速和研磨装置施加载荷,将实验结果取样,通过粗糙度仪测量球体的表面粗糙度,用扫描电镜和超景深三维显微镜检测研磨后的陶瓷球表面形貌,结合仿真分析和实验结果探究研磨参数对加工后表面质量的影响。结果将不同仿真轨迹下得到的研磨参数变化规律与实验结果相结合,得到了最佳的研磨参数,即研磨盘转速为50 r/min,施加的载荷为1.30 N,磨粒类型为W7。在此条件下得到的陶瓷球表面的粗糙度为0.0096μm,基本能达到实际生产中对G3级精度全陶瓷球的质量要求。结论陶瓷球的表面质量受到研磨盘转速、研磨装置施加载荷及磨粒粒径的影响较大,由仿真分析和实验结合可知,在研磨过程中随着磨粒粒径的减小,以及研磨盘转速和载荷的下降,陶瓷球的研磨轨迹趋于稀疏,表面粗糙度Ra呈下降趋势。研磨氮化硅陶瓷球时取粒径较小的磨粒,以较低的研磨盘转速和较小的研磨装置施加载荷有利于提高其表面质量。此研究成果对提高陶瓷球的表面质量具有重要的指导意义。As an important factor reflecting the surface shape accuracy of the sphere,the motion trajectory during the lapping process of the sphere has not been introduced and analyzed in the current research.For the above reasons,the lapping trajectory of the ceramic ball is introduced into the process of studying the effect mechanism of the surface quality of the sphere,which can be more accurate.The work aims to analyze the effect of lapping trajectory on the surface quality of the ceramic ball under the same lapping liquid ratio and abrasive type,but the different lapping disc rotation speed,load applied by the lapping device and abrasive particle,and clarify the optimal lapping parameters of silicon nitride ceramic ball processed by taper lapping,so as to improve the surface quality of the ceramic ball.Through the optimal lapping parameters,a silicon ceramic ball with good surface quality and high precision can be fabricated.Firstly,the relative motion model between the taper lapping disc and the silicon nitride ceramic ball was established during the lapping.On the basis of the established model,MATLAB was used to simulate the lapping trajectories of the silicon nitride ceramic ball under different lapping parameters.By analyzing these lapping trajectories,the effect of the lapping parameters on the motion state during the lapping process of the ball was obtained.Then,the taper lapping device was used for single-factor experiment verification,and the three variables involved in the experiment were set as the type of abrasive particles(particle size),the lapping disc rotation speed and the load applied by the lapping device.The experimental results were sampled,the surface roughness of the ball was measured by roughness meter,and the surface morphology of the lapping ceramic ball was detected by scanning electron microscope and ultra-depth three-dimensional microscope.Combined with the simulation analysis and experimental results,the effects of the lapping disc rotation speed,the load applied by the lapping device,and

关 键 词：氮化硅陶瓷球 锥形研磨法 研磨参数 研磨轨迹 单因素实验 表面质量 

分 类 号：TQ174.75[化学工程—陶瓷工业]