一种基于薄膜铌酸锂调制器芯片的新型电光调制器  

New electro-optic modulator based on thin film lithium niobate modulator chip

作　　者：杨鹏毅 李韬 姚宗影 YANG Pengyi;LI Tao;YAO Zongying(The 43th Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088

出　　处：《光通信技术》2023年第1期73-76,共4页Optical Communication Technology

摘　　要：针对传统铌酸锂电光调制器体积大、带宽小等技术问题,提出了一种基于薄膜铌酸锂调制器芯片的新型电光调制器的设计方法,给出了薄膜铌酸锂电光调制器高频传输仿真模型,详细介绍了薄膜铌酸锂电光调制器的高频信号馈入设计、过渡薄膜基板高频阻抗匹配设计,并测试了40 GHz小尺寸薄膜铌酸锂电光调制器的核心指标。测试结果表明:设计的薄膜铌酸锂电光调制器插入损耗、半波电压、3 dB带宽、产品尺寸分别为4.1 dB、3.9 V、40 GHz、30 mm×10 mm×5 mm,比传统铌酸锂电光调制器性能优越。Aiming at the technical problems of large volume and low bandwidth of traditional lithium niobate electro-optic modulator,a new design method of electro-optic modulator based on thin film lithium niobate modulator chip is proposed.The high-frequency transmission simulation model of thin film lithium niobate electro-optic modulator is given.The design of high frequency signal feed in thin film lithium niobate electro-optic modulator and high frequency impedance matching design of transition film substrate are introduced in detail,the key specifications of 40 GHz small size thin film lithium niobate electro-optic modulator are tested.The test results show that the insertion loss,half wave voltage,3 dB bandwidth and product size of the designed thin film lithium niobate electro-optic modulator are 4.1 dB,3.9 V,40 GHz and 30 mm×10 mm×5 mm respectively,superior to the traditional lithium niobate electro-optic modulator.

关 键 词：薄膜铌酸锂 电光调制器 光传输 微波光子 

分 类 号：TN15[电子电信—物理电子学]