碳化硅外延反应室及加热系统设计与热场仿真验证  

Design and Simulation for Induction Heating Reactor of Silicon Carbide Epitaxial Growth

作　　者：唐卓睿 王慧勇 孔倩茵 张南 黄吉裕 Tang Zhuorui;Wang Huiyong;Kong Qianyin;Zhang Nan;Huang Jiyu(Jihua Laboratory,Foshan,Guangdong 528253,China)

机构地区：[1]季华实验室,广东佛山528253

出　　处：《机电工程技术》2022年第12期248-252,共5页Mechanical & Electrical Engineering Technology

基　　金：季华实验室基金项目(编号:X210241TC210)。

摘　　要：反应室及加热系统的设计是影响碳化硅(SiC)外延炉性能的关键因素,而通过大量的“试错”实验来验证反应室及加热系统的设计会耗费巨大成本,不适用于实际工业研发。结合SiC外延装备核心反应室及感应加热系统的理论参数计算和模拟仿真,以获得较为合理的设计方案。首先,结合装备指标要求,使用理论参数计算,推导出反应室及加热系统相关参数;随后,采用有限元仿真方法得出了反应室的温场分布,其结果与装备指标所要求的温度、升温速率的误差均在5%以内;最后,根据理论计算出的参数值,制作了反应室并进行测温实验,其真实温度指标与设计指标一致。这种设计方法大大缩短了反应室设计过程中大量“试错”实验的成本,为其他感应加热设备的反应室及加热系统设计提供了可借鉴的方案。The design of the reatcor and heating system is a key factor to affect the performance of the silicon carbide(SiC)epitaxial equipment,and it will cost a lot to verify the reactor and heating system through a lot of“trial and error”experiments,which is not suitable for actual product development.Combined with the theoretical parameter calculation and simulation of the core reaction chamber and induction heating system of SiC epitaxial equipment,a more reasonable design scheme was obtained.First,the relevant parameters of the reaction chamber and heating system were deduced by using theoretical parameter calculation.Second,the temperature distribution of the reactor was obtained by using the finite element simulation method.The error between the simulation results and established index such as average temperature and heating rate were within 5%.Finally,according to the theoretically calculated parameter values,a reaction chamber was fabricated and measurement experiment of the temperature was carried out.The actual temperature was consistent with the design index.The design method greatly reduces the cost of a large number of“trial and error”experiments in the design of the reaction chamber,and it provides a reference for the design of the reaction chamber and heating system of other induction heating equipment.

关 键 词：SiC外延炉 反应室设计 理论计算 热场仿真 

分 类 号：TN304[电子电信—物理电子学]