Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer  

作　　者：Li Zhong Xiaobao Li Wei Wang Xinle Xiao 

机构地区：[1]School of Civil Engineering,Hefei University of Technology,Hefei 230009,China [2]Jiangsu Key Laboratory of Engineering Mechanics,Southeast University,Nanjing 210096,China [3]Key Laboratory of MicroNano Powder and Advanced Energy Materials of Anhui Higher Education Institute,School of Chemistry and Materials Engineering,Chizhou University,Chizhou 247000,China

出　　处：《Journal of Semiconductors》2023年第1期85-93,共9页半导体学报（英文版）

基　　金：supported by the Fundamental Research Funds for the Central Universities of China(Nos.PA2021KCPY0029 and LEM21A01)。

摘　　要：In recent years,Janus two-dimensional(2D)materials have received extensive research interests because of their outstanding electronic,mechanical,electromechanical,and optoelectronic properties.In this work,we explore the structural,electromechanical,and optoelectronic properties of a novel hypothesized Janus InGaSSe monolayer by means of first-principles calculations.It is confirmed that the Janus InGaSSe monolayer indeed show extraordinary charge transport properties with intrinsic electron mobility of 48139 cm^(2)/(V·s)and hole mobility of 16311 cm^(2)/(V·s).Both uniaxial and biaxial strains can effectively tune its electronic property.Moreover,the Janus InGaSSe monolayer possesses excellent piezoelectric property along both inplane and out-of-plane directions.The results of this work imply that the Janus InGaSSe monolayer is in fact an efficient photocatalyst candidate,and may provide useful guidelines for the discovery of other new 2D photocatalytic and piezoelectric materials.

关 键 词：Janus InGaSSe monolayer SEMICONDUCTING photocatalyst PIEZOELECTRICITY 

分 类 号：TN248.4[电子电信—物理电子学]