硅基三维集成射频无源器件及电路研究进展  

Research progress of silicon-based 3D integrated RF passive devices and circuits

作　　者：朱樟明[1] 尹湘坤 刘晓贤 杨银堂[1] ZHU Zhangming;YIN Xiangkun;LIU Xiaoxian;YANG Yintang(School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《微电子学与计算机》2023年第1期11-17,共7页Microelectronics & Computer

基　　金：国家重点研发计划资助项目(2022YFB4401303)

摘　　要：射频电賂在移动通信终端和雷达前端等电子系统中占据了较大比例的面积和体积,且现有射频集成方式无法实现无源电路的微型化、多功能化、一体化系统集成,成为系统小型化集成、性能提升的瓶颈,更制约了各种电子设备和通信系统的发展.基于硅通孔的三维集成技术可以实现硅基电路的多层堆叠,在实现高密度、高性能、微型化的射频系统方面具有巨大发展潜力和广阔应用前景.本文介绍了基于硅基三维集成技术实现的射频无源器件及电路的研究进展,主要包括无源电容、电感、天线、滤波器、功分器、耦合器、巴伦.最后,对各类射频无源器件及功能电路模块的发展现状和趋势进行了总结和展望.RF circuit occupies a large proportion in the mobile communication terminal and the radar front-end electronic system such as the area and volume.The existing radio frequency(RF)integration methods cannot realize the miniaturization,multi-function and integrated RF passive system,which becomes the bottleneck of system miniaturization integration and performance improvement,and restricts the development of various electronic devices and communication systems.Based on the development of Through-Silicon Via(TSV)technology,three-dimensional(3D)stacking of silicon-based circuit can be realized,which has great potential and application prospects in realizing high-density,superior­performance and miniaturized RF integrated systems.In this paper,the latest research progress of main RF passive devices and passive circuits based on silicon-based 3D integration technology is introduced,mainly including capacitor,inductor,antenna,filter,power splitters,couplers and baluns.Finally,the research status and development trends of various RF devices and functional circuit modules are summarized and prospected.

关 键 词：三维集成电路 射频 无源器件 无源电路 硅通孔 

分 类 号：TN305[电子电信—物理电子学] TN405