基于双曲函数的通用型荷控忆阻器电路等效模型分析  

Circuit Model Analysis of General Charge-controlled Memristor Based on Hyperbolic Functions

作　　者：孙军伟 杨建领 刘鹏 王延峰 SUN Junwei;YANG Jianling;LIU Peng;WANG Yanfeng(Institute of Electrical and Information Engineering,Zhengzhou University of Light Industry,Zhengzhou 450000,China)

机构地区：[1]郑州轻工业大学电气信息工程学院,郑州450000

出　　处：《电子与信息学报》2023年第2期725-733,共9页Journal of Electronics & Information Technology

基　　金：国家自然科学基金河南联合基金重点项目(U1804262);中原青年拔尖人才项目(ZYYCYU202012154);河南省教育厅科技创人才支持项目(20HASTIT027)。

摘　　要：目前,忆阻器模拟器的研究主要集中在磁控忆阻器,对荷控忆阻器模拟器的研究不多,双曲函数型的荷控忆阻器模拟器也很少涉及。因此,该文提出一种基于双曲函数的通用型荷控忆阻器模拟器。模拟器通过电压-电流的相互转换电路,实现电路中电压和电流信号之间的相互转换,再通过电路中对应的电路模块对产生的信号进行计算,最终得到通用型双曲荷控忆阻器模型。模拟器能够实现双曲正弦、双曲余弦以及双曲正切函数对应的荷控忆阻器模型。通用型双曲函数荷控忆阻器模拟器对应的等效电路,主要由运算放大器、电阻、电容、三极管等基本元件组成。分析模拟器在不同幅值以及不同频率的输入信号下的伏安特性曲线,得出荷控忆阻器模拟器符合记忆元件的基本特性。该文提出的通用型双曲函数荷控忆阻器模型,对忆阻器模型的发展具有一定的参考意义。At present, most of the researches on the memristor simulators are flux-controlled, there are few researches on the charge-controlled memristor simulator, and the hyperbolic function simulator is seldom mentioned. Therefore, a general-purpose simulator of charge-controlled memristor based on hyperbolic function is proposed. The simulator realizes the conversion between voltage and current signals in the circuit through the voltage-current mutual conversion circuit, and calculates the generated signals through the corresponding module in the circuit, and finally obtains the universal hyperbolic charge-controlled memristor model. The simulator can realize the charge-controlled memristor corresponding to hyperbolic sine, hyperbolic cosine and hyperbolic tangent function. The equivalent circuit of the general-purpose hyperbolic function charge-controlled memristor simulator is mainly composed of operational amplifier, resistor, capacitor, triode and other basic components. By analyzing the volt-ampere characteristic curves of the simulator at different amplitudes and different frequencies, it is concluded that the simulator conforms to the basic characteristics of memory devices.The model of hyperbolic charge-controlled memristor presented in this paper has a certain reference significance for the development of memristor model.

关 键 词：荷控忆阻器 电路模型 双曲函数 伏安特性曲线 

分 类 号：TN601[电子电信—电路与系统] TN751.2