In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor  

作　　者：Zhinan Guo Yonghong Zeng Fanxu Meng Hengze Qu Shengli Zhang Shipeng Hu Sidi Fan Haibo Zeng Rui Cao Paras N.Prasad Dianyuan Fan Han Zhang 

机构地区：[1]Institute of Microscale Optoelectronics,International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [2]MIIT Key Laboratory of Advanced Display Materials and Devices,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [3]Institute for Lasers,Photonics,and Biophotonics and Department of Chemistry,University at Buffalo,The State University of New York,Buffalo,NY 14260,USA

出　　处：《eLight》2022年第1期112-120,共9页e光学（英文）

基　　金：State Key Research Development Program of China(Grant No.2019YFB2203503);National Natural Science Fund(Grant Nos.61875138,61961136001,62104153,62105211 and U1801254);Natural Science Foundation of Guangdong Province(2018B030306038 and 2020A1515110373);Science and Technology Innovation Commission of Shenzhen(JCYJ20180507182047316 and 20200805132016001);Postdoctoral Science Foundation of China(No.2021M702237)。

摘　　要：Neutron-transmutation doping(NTD)has been demonstrated for the first time in this work for substitutional introduction of tin(Sn)shallow donors into two-dimensional(2D)layered indium selenide(InSe)to manipulate electron transfer and charge carrier dynamics.Multidisciplinary study including density functional theory,transient optical absorption,and FET devices have been carried out to reveal that the field effect electron mobility of the fabricated phototransistor is increased 100-fold due to the smaller electron effective mass and longer electron life time in the Sn-doped InSe.The responsivity of the Sn-doped InSe based phototransistor is accordingly enhanced by about 50 times,being as high as 397 A/W.The results show that NTD is a highly effective and controllable doping method,possessing good compatibility with the semiconductor manufacturing process,even after device fabrication,and can be carried out without introducing any contamination,which is radically different from traditional doping methods.

关 键 词：Neutron-transmutation doping Substitutional doping Two-dimensional materials PHOTOTRANSISTOR 

分 类 号：TN32[电子电信—物理电子学]