小型化亚纳秒YAG/Nd:YAG/Cr^(4+):YAG微片激光器  

Miniatured Sub-nanosecond YAG/Nd:YAG/Cr^(4+):YAG Microchip Laser

作　　者：孙晓晖 宋海鹏 叶帅 聂鸿坤 何京良 张百涛 SUN Xiaohui;SONG Haipeng;YE Shuai;NIE Hongkun;HE Jingliang;ZHANG Baitao(Institute of Novel Semiconductors,State Key Laboratory of Crystal Materials,Shandong University,Jinan,China)

机构地区：[1]山东大学新一代半导体材料研究院,山东大学晶体材料国家重点实验室,济南

出　　处：《光电技术应用》2022年第6期38-44,共7页Electro-Optic Technology Application

基　　金：国家自然科学基金(61975095)。

摘　　要：脉冲半导体激光(LD)泵浦被动调Q微片激光器是产生小型化、大能量(mJ量级)、亚纳秒激光脉冲的主要技术途径。基于速率方程理论推导了脉冲LD泵浦被动调Q微片激光器首脉冲建立时间及多脉冲间隔时间方程,数值求解并分析了泵浦功率、泵浦脉宽等参数对亚纳秒激光输出脉冲数目的影响规律,在此基础上搭建了脉冲LD端面泵浦YAG/Nd:YAG/Cr^(4+):YAG微片激光器,实现了单脉冲能量1.2 mJ、脉冲宽度574 ps、峰值功率2.1 MW,光束质量因子M^(2)=1.21的1064 nm近衍射极限亚纳秒脉冲激光输出。Pulsed laser diode(LD)pumped passively Q-switched microchip laser is the most effective technique for miniatured large energy sub-nanosecond laser pulse generation.Here,the first pulse established time,time interval of the multi pulse,as well as the influence of the pump energy and pulse width on the output laser pulse number of the pulsed LD pumped passively Q-switched microchip laser are analyzed based on the rate equation theory.And YAG/Nd:YAG/Cr^(4+):YAG microchip laser pumped by a pulsed LD is established on this basis,in which the near-diffraction limit sub-nanosecond pulse laser at 1064 nm is demonstrated with the single pulse energy of 1.2 mJ,the pulse width of 574 ps,the peak power of 2.1 MW,and the beam quality factor of M^(2)=1.21.

关 键 词：微片激光器 YAG/Nd:YAG/Cr^(4+):YAG晶体 被动调Q 速率方程 

分 类 号：TN248[电子电信—物理电子学]