原子层沉积制备非晶氧化铝薄膜及其光谱椭偏  

Preparation by Atomic Layer Deposition and Spectroscopic Ellipsometry of Amorphous Aluminium Oxide Films

作　　者：石树正 马立勇 王占英 Shi Shuzheng;Ma Liyong;Wang Zhanying(College of Mechanical Engineering,Hebei University of Architecture and Engineering,Zhangjiakou 075000,China;Special Equipment Intelligent Monitoring Operation and Maintenance Technology Innovation Center of Zhangjiakou,Zhangjiakou 075000,China)

机构地区：[1]河北建筑工程学院机械工程学院,河北张家口075000 [2]张家口市特种设备智慧监测运维技术创新中心,河北张家口075000

出　　处：《微纳电子技术》2022年第11期1218-1225,1241,共9页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(51975541);河北省“三三三人才工程”资助项目(A202101021);河北省高校基本科研业务费资助项目(2022QNJS01);河北省教育厅自然科学重点项目(ZD2021315);河北省技术创新引导计划项目(20475501D)。

摘　　要：采用原子层沉积(ALD)技术在200℃下制备了不同厚度的氧化铝薄膜,并利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散光谱仪(EDS)和原子力显微镜(AFM),对薄膜的晶相、组分以及形貌结构进行测试分析,利用光谱椭偏仪采用Forouhi-Bloomer(F-B)色散模型分析了波长300~800 nm内薄膜结构和光学特性。实验结果表明,氧化铝薄膜为非晶态结构,氧和铝原子数之比维持在5左右;薄膜表面光滑无裂纹,粗糙度稳定在1.5 nm左右。随着薄膜厚度的增加,折射率和消光系数均增大,这主要是薄膜厚度增加时,薄膜层内空气的体积分数减小和a-AlOx密度提升所致。F-B拟合厚度与SEM测试结果基本一致,ALD制备的α-AlOx薄膜的生长速率约为每循环0.1 nm,F-B模型获得的粗糙度更小(约为0.5 nm)。α-AlOx薄膜光学性能优异且利用ALD易于制备,可为研究其他类似的氧化物提供参考。Aluminium oxide films with different thicknesses were prepared by atomic layer deposition(ALD)technology at 200℃.X-ray diffractometer(XRD),scanning electron microscope(SEM),energy dispersive spectrometer(EDS)and atomic force microscope(AFM)were used to test and analyze the crystal phase,composition,morphology and structure of the films.Forouhi-Bloomer(F-B)chromatic dispersion model was employed to analyze the film structures and optical properties in the wavelength range of 300-800 nm by the spectroscopic ellipsometer.The experimental results show that the aluminium oxide films have amorphous structure and the atoms number ratio of oxygen to aluminum is about 5.The surface of the films is smooth without crack,and the roughness is about 1.5 nm.With the increase of the film thickness,refractive index and extinction coefficient increase,which is mainly caused by the decrease of air volume fraction in the film and the increase ofα-AlOxdensity as the film thickness increases.The F-B fitting thickness is basically consistent with SEM test results.The growth rate of theα-AlOxfilms prepared by ALD is about 0.1 nm per cycle,and the roughness obtained by F-B model is lower(about 0.5 nm).The excellent optical properties and easy preparation by ALD ofα-AlOxfilms can provide a reference for the study of other similar oxides.

关 键 词：非晶态氧化铝 原子层沉积(ALD) 光谱椭偏分析 Forouhi-Bloomer(FB)模型 色散模型 

分 类 号：TN304.055[电子电信—物理电子学]