Silicon nitride-based Kerr frequency combs and applications in metrology  被引量:3

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作  者:Zhaoyang Sun Yang Li Benfeng Bai Zhendong Zhu Hongbo Sun 

机构地区:[1]Tsinghua University,State Key Laboratory of Precision Measurement and Instruments,Department of Precision Instrument,Beijing,China [2]National Institute of Metrology,Beijing,China

出  处:《Advanced Photonics》2022年第6期6-22,共17页先进光子学(英文)

基  金:the National Key Research and Development Program of China(2021YFA1401000,2021YFB2801600,and 2017YFF0206104);National Natural Science Foundation of China(62075114 and 62175121);the Beijing Natural Science Foundation(4212050)。

摘  要:Kerr frequency combs have been attracting significant interest due to their rich physics and broad applications in metrology,microwave photonics,and telecommunications.In this review,we first introduce the fundamental physics,master equations,simulation methods,and dynamic process of Kerr frequency combs.We then analyze the most promising material platform for realizing Kerr frequency combs—silicon nitride on insulator(SNOI)in comparison with other material platforms.Moreover,we discuss the fabrication methods,process optimization as well as tuning and measurement schemes of SNOI-based Kerr frequency combs.Furthermore,we highlight several emerging applications of Kerr frequency combs in metrology,including spectroscopy,ranging,and timing.Finally,we summarize this review and envision the future development of chip-scale Kerr frequency combs from the viewpoint of theory,material platforms,and tuning methods.

关 键 词:Kerr frequency comb silicon nitride Lgiato–Lefever equation damascene process precision measurements 

分 类 号:TB9[一般工业技术—计量学]

 

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