MoS_(2)/Si tunnel diodes based on comprehensive transfer technique  

作　　者：朱翊 吕红亮 张玉明 贾紫骥 孙佳乐 吕智军 芦宾 Yi Zhu;Hongliang Lv;Yuming Zhang;Ziji Jia;Jiale Sun;Zhijun Lyu;Bin Lu(School of Microelectronics,Xidian University,The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi'an 710071,China;Department of Integrated Circuit Design,Institute of Microelectronics Technology,Xi'an 710071,China;School of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030031,China)

机构地区：[1]School of Microelectronics,Xidian University,The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi'an 710071,China [2]Department of Integrated Circuit Design,Institute of Microelectronics Technology,Xi'an 710071,China [3]School of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030031,China

出　　处：《Chinese Physics B》2023年第1期106-112,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.61851405)。

摘　　要：Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current(IOFF), high on-state current(ION) and steep subthreshold swing(SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need.The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable.Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film,which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape(TRT) is proposed. Based on the method we proposed, the MoS_(2)/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS_(2) film with the relatively high crystal quality is confirmed by atomic force microscopy(AFM), scanning electron microscopy(SEM), and Raman characterizations. Besides, the prominent negative differential resistance(NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS_(2)/Si heterojunction. The bilayer MoS_(2)/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, f

关 键 词：2D/3D heterostructure transfer technique tunnel diode MoS_(2)/Si 

分 类 号：TN31[电子电信—物理电子学]