Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure  

作　　者：田魁元 刘勇 杜江锋 于奇 Kuiyuan Tian;Yong Liu;Jiangfeng Du;Qi Yu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Chinese Physics B》2023年第1期470-477,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.61376078);the Natural Science Foundation of Sichuan Province,China (Grant No.2022NSFSC0515)。

摘　　要：A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the interface of high-K and low-K layers due to the different dielectric constants of high-K and low-K dielectric layers.A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode(JBS),so the distribution of electric field in JBS becomes more uniform.At the same time,the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-K dielectric layer and an enhancement of breakdown voltage can be achieved.Numerical simulations demonstrate that GaN JBS with a specific on-resistance(R_(on,sp)) of 2.07 mΩ·cm^(2) and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure,resulting in a high figure-of-merit(FOM) of 8.6 GW/cm^(2),and a low turn-on voltage of 0.6 V.

关 键 词：GaN junction barrier Schottky diode compound dielectric breakdown voltage turn-on voltage 

分 类 号：TN311.7[电子电信—物理电子学]