Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature  

作　　者：姚建可 钟文森 Jian-Ke Yao;Wen-Sen Zhong(College of Materials&New Energy,South China Normal University,Shanwei 516625,China;Blue Lake Optic-electronic Company,Huizhou 516001,China)

机构地区：[1]College of Materials&New Energy,South China Normal University,Shanwei 516625,China [2]Blue Lake Optic-electronic Company,Huizhou 516001,China

出　　处：《Chinese Physics B》2023年第1期559-562,共4页中国物理B（英文版）

基　　金：Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province,China (Grant No.GDKTP2021015200)。

摘　　要：For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

关 键 词：BaSnO_(3)and In_2O_(3)mixed film filtered cathodic vacuum arc deposition transparent conductive films microstructure optical properties electrical properties 

分 类 号：TB383.2[一般工业技术—材料科学与工程]