A field-effect WSe_(2)/Si heterojunction diode  

作　　者：余睿 盛喆 胡文楠 王越 董建国 孙浩然 程增光 张增星 Rui Yu;Zhe Sheng;Wennan Hu;Yue Wang;Jianguo Dong;Haoran Sun;Zengguang Cheng;Zengxing Zhang(State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China;National Integrated Circuit Innovation Center,Shanghai 201203,China)

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China [2]National Integrated Circuit Innovation Center,Shanghai 201203,China

出　　处：《Chinese Physics B》2023年第1期592-597,共6页中国物理B（英文版）

基　　金：Project supported by the Ministry of Science and Technology of China (Grant No.2018YFE0118300);the National Key Research and Development Program of China (Grant No.2018YFA0703703);State Key Laboratory of ASIC&System (Grant No.2021MS003);Science and Technology Commission of Shanghai Municipality,China (Grant No.20501130100)。

摘　　要：It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

关 键 词：two-dimensional material ambipolar semiconductor field-effect transistor optoelectronic device 

分 类 号：O469[理学—凝聚态物理] TN31[理学—电子物理学]