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作 者:Bo Xie Ran Peng Shihao Zhang Jianpeng Liu
机构地区:[1]School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China [2]ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai,201210,China
出 处:《npj Computational Materials》2022年第1期1037-1044,共8页计算材料学(英文)
基 金:This work is supported by the National Key R&D program of China(grant no.2020YFA0309601);the National Science Foundation of China(grant no.12174257);the start-up grant of ShanghaiTech University.
摘 要:Recently the alternating twisted trilayer graphene is discovered to exhibit unconventional superconductivity,which motivates us to study the electronic structures and possible correlation effects for this class of alternating twisted multilayer graphene(ATMG)systems.In this work we consider generic ATMG systems with M-L-N stacking configurations,in which the M(L)graphene layers and the L(N)layers are twisted by an angleθ(−θ).Based on analysis from a simplified k⋅p model approach,we derive generic partition rules for the low-energy electronic structures,which exhibit various band dispersions including two pairs of flat bands and flat bands co-existing with various gapless Fermionic excitations.For a mirror-symmetric ATMG system with doubled flat bands,we further find that Coulomb interactions may drive the system into a state with intertwined electric polarization and orbital magnetization orders,which can exhibit an interaction-driven orbital magnetoelectric effect.
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