An L-band emitter with quantum memory in silicon  

作　　者：Péter Udvarhelyi Anton Pershin Péter Deák Adam Gali 

机构地区：[1]Wigner Research Centre for Physics,P.O.Box 49,H-1525,Budapest,Hungary [2]Budapest University of Technology and Economics,Institute of Physics,Department of Atomic Physics,Műegyetem rakpart 3.,1111,Budapest,Hungary

出　　处：《npj Computational Materials》2022年第1期2498-2503,共6页计算材料学（英文）

基　　金：A.G.acknowledges the Hungarian NKFIH grant No.KKP129866 of the National Excellence Programme of Quantum-coherent materials project and the EU H2020 project QuanTELCO(Grant No.862721);This research was supported by the Ministry of Culture and Innovation and the National Research,Development and Innovation Office within the Quantum Information National Laboratory of Hungary(Grant No.2022-2.1.1-NL-2022-00004)。

摘　　要：Fluorescent centres in silicon have recently attracted great interest,owing to their remarkable properties for quantum technology.Here,we demonstrate that the C-centre in silicon can realise an optically readable quantum register in the L-band wavelength region where the transmission losses in commercial optical fibres are minimal.Our in-depth theoretical characterisation confirms the assignment of the C-centre to the carbon-oxygen interstitial pair defect.We further explore its magneto-optical properties,such as hyperfine and spin-orbit coupling constants from first principles calculations,which are crucial for tight control of the quantum states of the triplet electron spin.Based on this data,we set up quantum optics protocols to initialise and read out the quantum states of the electron spin,and realise a quantum memory by transferring quantum information from the electron spin to proximate ^(29)Si nuclear spins.Our findings establish an optically readable long-living quantum memory in silicon where the scalability of qubits may be achieved by CMOS-compatible technology.

关 键 词：QUANTUM CENTRE OPTICS 

分 类 号：O41[理学—理论物理]