Large-area photonic lift-off process for flexible thin-film transistors  

作　　者：Adam M.Weidling Vikram STurkani Vahid Akhavan Kurt A.Schroder Sarah L.Swisher 

机构地区：[1]Department of Electrical and Computer Engineering,University of Minnesota Twin Cities,4-174 Keller Hall,200 Union Street S.E.,Minneapolis,MN 55455,USA [2]NovaCentrix,400 Parker Drive,Suite 1110,Austin,TX 78728,USA

出　　处：《npj Flexible Electronics》2022年第1期115-124,共10页npj-柔性电子（英文）

基　　金：supported by the National Science Foundation under Grant No.ECCS-1710008;supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI)under award number ECCS-1542202;support from NSF through the MRSEC award number DMR-2011401.

摘　　要：Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates.To mitigate,glass carriers are used during fabrication,but removing the plastic substrate from a carrier without damaging the electronics remains challenging.Here we utilize a large-area,high-throughput photonic lift-off(PLO)process to rapidly separate polymer films from rigid carriers.PLO uses a 150µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer(LAL).Modeling indicates that the polymer/LAL interface reaches above 800℃ during PLO,but the top surface of the PI remains below 120℃.An array of indium zinc oxide(IZO)thin-film transistors(TFTs)was fabricated on a polyimide substrate and photonically lifted off from the glass carrier.The TFT mobility was unchanged by PLO.The flexible TFTs were mechanically robust,with no reduction in mobility while flexed.

关 键 词：FILM PROCESS ABSORBER 

分 类 号：TN32[电子电信—物理电子学]