Scalable and low-cost fabrication of flexible WS_(2) photodetectors on polycarbonate  

作　　者：Jorge Quereda Sruthi Kuriakose Carmen Munuera Federico J.Mompean Abdullah M.Al-Enizi Ayman Nafady Enrique Diez Riccardo Frisenda Andres Castellanos-Gomez 

机构地区：[1]GISC,Departamento de Física de Materiales,Universidad Complutense de Madrid,Madrid,Spain [2]Materials Science Factory,Instituto de Ciencia de Materiales de Madrid(ICMMCSIC),28049 Madrid,Spain [3]Department of Chemistry,College of Science,King Saud University,Riyadh 11451,Saudi Arabia [4]Nanotechnology Group,USAL–Nanolab,Universidad de Salamanca,37008 Salamanca,Spain

出　　处：《npj Flexible Electronics》2022年第1期226-234,共9页npj-柔性电子（英文）

基　　金：the Ministry of Science and Innovation (Spain)through the project PID2020-115566RB-I00.A.C.-G.,A.M.A.-E.;A.N.extend their sincere appreciation to the Distinguished Scientist Fellowship Program (DSFP)at King Saud University for funding of this work;support from the Spanish Ministry of Economy,Industry,and Competitiveness (MINECO)through a Juan de la Cierva-formación fellowship 2017 FJCI-2017-32919.J.Q.;support from the Agencia Estatal de Investigación of Spain (Grants PID2019-106820RB,RTI2018-097180-B-100,and PGC2018-097018-BI00);the Junta de Castilla y León (Grants SA256P18 and SA121P20),including funding by ERDF/FEDER.J.Q.;support from Universidad Complutense de Madrid and European Commision (MSCA COFUND UNA4CAREER grant.Project number 4129252);from MICINN (Spain)through the program Juan de la Cierva-Incorporación.

摘　　要：We present a low-cost and easy-to-implement technique to fabricate large-area WS_(2) photodetector devices onto transparent and flexible polycarbonate substrates.The method relies on the deposition of large-area(in the cm scale)thin films(~30 nm thick)of WS_(2) by a recently introduced abrasion-induced method.Interdigitated electrical contacts are then deposited by thermal evaporation through a shadow mask.The photodetectors present well-balanced performances with an good trade-off between responsivity(up to 144 mA/W at a source-drain voltage of 10 V and illumination power of 1μW)and response time(down to~70µs)and a detectivity value of 10^(8) Jones.We found that the devices perform very reversibly upon several illumination and straining cycles and we found a moderate device-to-device variation.

关 键 词：DRAIN ILLUMINATION cost 

分 类 号：TN15[电子电信—物理电子学]