Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability,shelf stability,and luminance  

作　　者：Zi Ye Mengyu Chen Xingtong Chen Wenchen Ma Xiaojuan Sun Longjia Wu Xiongfeng Lin Yu Chen Song Chen 

机构地区：[1]Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices,College of Chemistry,Chemical Engineering and Materials Science,Soochow University,Suzhou,Jiangsu,PR China [2]Jiangsu Key Laboratory of Advanced Negative Carbon Technologies,Soochow University,Suzhou,Jiangsu,PR China [3]School of Optoelectronic Science and Engineering&Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou,Jiangsu,PR China [4]TCL Corporate Research,Shenzhen,Guangdong,PR China

出　　处：《npj Flexible Electronics》2022年第1期949-955,共7页npj-柔性电子（英文）

基　　金：supported by the National Key Research and Development Program of China (Grant 2021YFB3601700);the National Natural Science Foundation of China (Grant 62275183);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJA550001);Key Lab of Modern Optical Technologies of Education Ministry of China;Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province;Priority Academic Program Development (PAPD)of Jiangsu Higher Education Institutions;Jiangsu Shuangchuang Plan.

摘　　要：The shelf-stability issue,originating from the ZnO-induced positive aging effect,poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes(QLEDs).Currently,none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer(ETL)and retain other advantages of ZnO.Here in this work,we propose a bilayer design of ETL in which a buffer layer assembled of SnO_(2) nanoparticles(NPs)suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity.As a result,the bottom-emitting QLED combining capped ZnO and SnO_(2) buffer exhibit a maximum luminance over 100,000 cd m^(−2) and a T95 operational lifetime averaging 6200 h at 1000 cd m^(−2) on the premise of entirely inhibiting positive aging.

关 键 词：DIODES stability quantum 

分 类 号：TN312.8[电子电信—物理电子学]