SiO_(2)掺杂对ZnO-Pr_(6)O_(11)基压敏陶瓷电学性能的影响  

Effects of SiO_(2)Doping on Electrical Properties of ZnO-Pr_(6)O_(11)Based Varistor Ceramics

作　　者：朱桥 曹文斌 ZHU Qiao;CAO Wenbin(School of Arts and Sciences,Shaanxi University of Science and Technology,Research Center for Semiconductor Materials and Devices,Shaanxi University of Science and Technology,Xi'an 710021,China)

机构地区：[1]陕西科技大学文理学院,陕西科技大学半导体材料与器件研究中心,西安710021

出　　处：《硅酸盐学报》2022年第12期3206-3211,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51802183)。

摘　　要：采用固相烧结法制备ZnO-Pr_(6)O_(11)-Co_(2)O_(3)-Cr_(2)O_(3)-Er_(2)O_(3)-SiO_(2)压敏陶瓷,研究了SiO_(2)掺杂对ZnO压敏陶瓷的物相、微观形貌、压敏特性和阻抗特性等的影响。结果表明:SiO_(2)具有抑制晶粒生长的作用,随着SiO_(2)掺杂量增加,晶粒尺寸逐渐减小;SiO_(2)掺杂量为1.0%(摩尔分数)时,ZnO压敏陶瓷的性能最好,生成的第二相物质最多,击穿场强、平均晶界电压、非线性系数、晶界电阻率和晶界势垒高度均为最大,其值分别为435.5 V/mm,1.63 V,17.5,17400 MΩ·cm和0.37 e V,漏电流最小为1μA;与未掺杂SiO_(2)的ZnO压敏陶瓷相比,击穿场强和非线性系数分别提高了3.6倍和6.6倍。The Zn O-Pr_(6)O_(11)-Co_(2)O_(3)-Cr_(2)O_(3)-Er_(2)O_(3)-SiO_(2)varistors were prepared by a solid-state sintering method.The effect of SiO_(2)doping on the phase,microstructure,varistor property,and impedance characteristic of the ZnO varistors was investigated.The results show that the grain size decreases gradually with the increase of SiO_(2)content due to the restraining effect of grain growth in SiO_(2).The Zn O varistor with SiO_(2)content of 1.0%(in mole fraction)has an optimum overall performance to provide overvoltage protection for circuit(i.e.,the most second phase generated,the maximum breakdown voltage of 435.5 V/mm,the maximum mean grain boundary voltage of 1.63 V,the maximum nonlinear coefficient of 17.5,and the maximum resistivity of grain boundary of 17400 MΩ·cm,the maximum barrier height of grain boundary of 0.37 e V,and the minimum leak current of1μA,respectively).The breakdown voltage and nonlinear coefficient of ZnO varistor with SiO_(2)content of 1.0%are 3.6 and 6.6 times greater than those of Zn O varistor without SiO_(2).

关 键 词：氧化锌压敏陶瓷 二氧化硅掺杂 微观结构 压敏性能 阻抗性能 

分 类 号：TQ174[化学工程—陶瓷工业]