N-doped MoS_(2) via assembly transfer on an elastomeric substrate for high-photoresponsivity,air-stable and stretchable photodetector  

作　　者：Shuyan Qi Weifeng Zhang Xiaoli Wang Yifan Ding Yan Zhang Jiakang Qiu Ting Lei Run Long Nan Liu 

机构地区：[1]Beijing Key Laboratory of Energy Conversion and Storage Materials,College of Chemistry,Beijing Normal University,Beijing 100875,China [2]Beijing National Laboratory for Molecular Sciences(BNLMS),Key Laboratory of Polymer Chemistry and Physics of Ministry of Education,Center of Soft Matter Science and Engineering,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China [3]Department of Materials Science and Engineering,College of Engineering,Peking University,Beijing 100871,China

出　　处：《Nano Research》2022年第11期9866-9874,共9页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.21903007 and 22072006);Young Thousand Talents Program(No.110532103);Beijing Normal University Startup funding(No.312232102);Beijing Municipal Science&Technology Commission(No.Z191100000819002);the Fundamental Research Funds for the Central Universities(No.310421109)。

摘　　要：As a direct-bandgap semiconductor,single-layer MoS_(2) has gained great attention in optoelectronics,especially wearable photodetectors.However,MoS_(2) exhibits poor photoresponsivity on a stretchable substrate due to intrinsic low carrier density and a large number of scattering centers on polymer substrates.Few air-stable yet strong dopants on MoS_(2) has been reported.In addition,the roughness,hydrophobicity and susceptibility to organic solvents of polymer surface are critical roadblocks in the development of stretchable high-performance MoS_(2) photodetectors.Here,we realize a stretchable and stable photodetector with high photoresponsivity by combining n-type dopant((4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine,N-DMBI)with MoS_(2) and assembly transfer technique.It is found electron tends to transfer from N-DMBI to MoS_(2) and the effect is maintained after the integrable photodetector transferred directly by elastic substrate styrene-ethylene-butylene-styrene(SEBS),even after being exposed to the air for 20 days,which benifits greatly from the encapsulation of SEBS.The increased carrier density greatly promotes carrier injection efficiency and photogenerated electron–hole separation efficiency at the metal–semiconductor interface,thus offering a significantly improved photoresponsivity in MoS_(2) photodetectors.Moreover,such photodetector shows great durability to stretch,which can remain functional after stretched 100 cycles within its stretch limit.Our strategy opens a new avenue to fabricate high-photoresponsivity stretchable electronics or optoelectronics of two-dimensional(2D)materials.

关 键 词：transition metal dichalcogenides charge transfer stretchable photodetectors organic molecules 

分 类 号：TN215[电子电信—物理电子学]