Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy  

作　　者：Jiuxiang Dai Teng Yang Zhitong Jin Yunlei Zhong Xianyu Hu Jingyi Zou Weigao Xu Tao Li Yuxuan Lin Xu Zhang Lin Zhou 

机构地区：[1]School of Chemistry and Chemical Engineering,Frontiers Science Centre for Transformative Molecules,Shanghai Jiao Tong University,Shanghai 200240,China [2]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [3]Department of Electrical and Computer Engineering,Carnegie Mellon University,Pittsburgh,PA 15213,USA [4]Key Laboratory of Mesoscopic Chemistry,School of Chemistry and Chemical Engineering,Nanjing University,Nanjing 210023,China [5]Department of Electrical Engineering and Computer Sciences,University of California,Berkeley,CA 94720,USA

出　　处：《Nano Research》2022年第11期9954-9959,共6页纳米研究（英文版）

基　　金：supported by the National Key Basic Research Program of China(No.2021YFA1401400);the start-up funds of Shanghai Jiao Tong University,the National Natural Science Foundation of China(Nos.52103344,52031014,22022507,and 51973111);the National Key Research and Development Program of China(No.2017YFA0206301);Beijing National Laboratory for Molecular Sciences(No.BNLMS202004).

摘　　要：Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics.

关 键 词：two-dimensional materials van der Waals epitaxy indium arsenide nonlayered material 

分 类 号：TB383[一般工业技术—材料科学与工程]