InPBi薄膜材料的结构性能和光学性能研究  

Structural and Optical Property Study of InPBi Thin Films

作　　者：张立瑶 姚爽 喻鹏 冯铎 代金梦 曹有祥 ZHANG Liyao;YAO Shuang;YU Peng;FENG Duo;DAI Jinmeng;CAO Youxiang(Department of Physics,University of Shanghai for Science and Technology,Shanghai 200093,CHN)

机构地区：[1]上海理工大学理学院物理系,上海200093

出　　处：《半导体光电》2022年第5期898-902,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金青年项目(61904106);上海市扬帆人才计划项目(19YF1435300)。

摘　　要：室温下,InPBi表现出强而宽的光致发光光谱,其宽光谱特性来自于材料中的PIn反位深能级和与Bi相关的深能级。该特性使得InPBi有希望应用于制备光学相干层析扫描系统中的超辐射光源。文章利用透射电子显微镜和三维原子探针研究了InPBi薄膜材料的结构性能,发现Bi原子在InPBi薄膜中的分布极不均匀,在InPBi/InP界面出现了Bi的富集区,从该区域沿[001]方向出现了Bi的纳米面,此纳米面位于(110)平面上。这种Bi原子的富集分布阻碍了PIn反位参与的载流子复合过程,对InPBi的光学性能有显著的影响。研究结果可为制造光学相干层析扫描系统的超辐射发光二极管提供一定的理论基础。InPBi exhibits a strong and broad photoluminescence spectrum at room temperature. The broad spectrum originates from the PInantisite and Bi-related deep levels. This optical property makes InPBi promising for super-radiative light source in optical coherence tomography system(medical imaging technology). TEM and APT were used to discuss the structural property of InPBi thin films. The results show that Bi atoms distributes quite non-uniform in InPBi thin films. There is a Bi-rich region at the InPBi/InP interface. Besides, there is a Bi nano-wall in(110) face along the [001]. This enriched distribution of Bi atoms inhibits the carrier recombination processes in relation to PInantisite deep level. This work provides theoretical basis for fabricating super-radiative light-emitting diodes applied in optical coherence tomography system.

关 键 词：铟磷铋 透射电子显微镜 三维原子探针 光致发光谱 

分 类 号：O484[理学—固体物理] TN304.055[理学—物理]