在不同基底上APCVD生长石墨烯及其生长机制  

Growth of Graphene on Different Substrates by APCVD and Its Growth Mechanism

作　　者：张召凯 宋也男 Zhang Zhaokai;Song Yenan(Engineering Research Center for Nanophotonics&Advanced Instruments of Ministry of Education,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China)

机构地区：[1]华东师范大学物理与电子科学学院纳光电集成与先进装备教育部工程研究中心,上海200241

出　　处：《微纳电子技术》2022年第12期1343-1351,共9页Micronanoelectronic Technology

摘　　要：石墨烯的常压化学气相沉积(APCVD)生长通常在具有催化活性的Cu、铜镍(Cu-Ni)合金等金属基底表面进行,生长基底的单一性和模糊的生长机制大大限制了APCVD在石墨烯大规模制备中的应用前景。使用乙醇作为液态碳源,在石墨烯的APCVD生长过程中,调控生长时间和生长基底,在铜箔、Cu-Ni合金和SiO_(2)/Si基底表面实现了石墨烯的可控快速生长。1 min生长时间可在铜箔和Cu-Ni合金基底上分别生长高质量均匀的单层与双层石墨烯,5 min生长时间可在不具催化活性的SiO_(2)/Si基底上完成石墨烯的生长。此外,在石墨烯生长过程中,采用气相色谱对液态碳源乙醇高温裂解后碳原子的去向进行分析,发现采用不同基底时,在APCVD乙醇裂解生长石墨烯的过程中CO和CO_(2)的体积分数存在差异,以此推断不同基底表面上石墨烯生长行为的差异和生长过程中基底起到的催化作用。此工作对探明石墨烯的APCVD生长机制以及实现SiO_(2)/Si基底上石墨烯的APCVD生长具有重要的意义。The growth of graphene by atmospheric pressure chemical vapor deposition(APCVD)usually takes place on the surface of metal substrates such as Cu and Cu-Ni alloys with catalytic activities.The singularity of the growth substrate and the ambiguous growth mechanism greatly limit the prospect of APCVD in the large-scale preparation of graphene.The growth time and substrate were regulated during APCVD growth of graphene with the liquid carbon source of ethanol,and the controllable rapid growth of graphene was achieved on the surfaces of Cu foil,Cu-Ni alloy and SiO_(2)/Si substrates.High quality and unifomity monolayer and bilayer graphene can be grown on Cu foil and Cu-Ni alloy substrates for 1 min,respectively,and graphene can also be grown on a non-catalytic SiO_(2)/Si substrate for 5 min.In addition,gas chromatography was used to analyze the destinations of carbon atoms after pyrolysis of ethanol.It is found that the volume fractions of CO and CO_(2)are different on different substrates in the process of ethanol pyrolysis for graphene APCVD growth,which illustrates the different graphene growth behaviors on different substrates and catalytic effects of s ubstrates during growth.The work is of great significance for elucidating the APCVD growth mechanism of graphene and realizing APCVD growth of graphene on SiO_(2)/Si substrates.

关 键 词：常压化学气相沉积(APCVD) 石墨烯 气相色谱 金属基底 SiO_(2)/Si 

分 类 号：TB383[一般工业技术—材料科学与工程]