给体-受体型二维共轭聚合物的分子共平面性对阻变均一性的影响  

Effect of Molecular Coplanarity on Resistive Switching Homogeneity of D-A Type Two-Dimensional Conjugated Polymers

作　　者：袁磊 何智龙 刘书智 刘钢[1] YUAN Lei;HE Zhilong;LIU Shuzhi;LIU Gang(School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 201100,China;School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University,Shanghai 201100,China)

机构地区：[1]上海交通大学电子信息与电气工程学院,上海201100 [2]上海交通大学化学化工学院,上海201100

出　　处：《功能高分子学报》2023年第1期42-50,共9页Journal of Functional Polymers

摘　　要：有机忆阻器具有超快速度、超低功耗、非易失性存储等优势,有希望成为突破当前冯·诺依曼瓶颈和摩尔定律极限的关键电子元器件。利用2,6-双(三甲基锡)-4,8-双(5-己基-2-噻吩)-苯并[1,2-b:4,5-b’]二噻吩,4,9-二溴-6,7-双苯基[1,2,5]噻二唑-[3,4-g]喹喔啉和4,8-二溴苯并[1,2-c:4,5-c']双[1,2,5]噻二唑,通过Stille偶联法合成得到两种新型二维共轭给体-受体型聚合物pBDTT-PTQx和pBDTT-BBT,通过选取位阻较小的取代基、长度较短的烷基链和强推拉电子效应的共轭给体-受体单元优化分子共平面性,并对比研究了共平面性对材料阻变特性的影响。两种材料均具有高鲁棒性的Flash型阻变行为,可循环擦写100圈以上,其中pBDTT-BBT具有更好的分子共平面性,器件表面均方粗糙度仅为1.71 nm,开/关电压的扰动系数仅为9.4%和6.7%,高/低阻态的扰动系数为13.7%和9.4%,相较于PBDTT-PTQx,开/关电压与高/低阻值的稳定性和均一性获得很大提升。Organic memristors have the advantages of ultra-fast speed, ultra-low power consumption, non-volatile storage,and low manufacturing costs, which are expected to become key electronic components to break through the von Neumann bottleneck and the limit of Moore’s Law. However, the stability, homogeneity, and repeatability of memristors prepared by organic materials are poorer than inorganic memristors. Most of the current research addresses this problem from the aspect of morphology and crystalline control, while the research on optimization at the molecular level is relatively poor. The molecular coplanarity can be effectively improved by using conjugated donor-acceptor units with strong push-pull electronic effects,functional groups with small steric effects and shorter alkyl chains. In this work, two novel two-dimensional conjugated donoracceptor polymers, pBDTT-PTQx and pBDTT-BBT, were synthesized by the Stille coupling method, and their resistive switching properties were studied by optimizing molecular coplanarity. Both materials have highly robust Flash-like resistive switching behaviors and can be written and erased for more than 100 cycles. The simulation calculation of density functional theory shows that the resistance change mechanism of the two materials is charge transfer. Compared with pBDTT-PTQx, the dihedral angle between the donor and the acceptor of pBDTT-BBT is only-179.27 °, and the mean square roughness of the device surface is only 1.71 nm. The ON/OFF ratio of pBDTT-BBT can still be maintained at around 10 and the disturbance is small after the 104 s read operation. What’s more, the disturbance coefficients of switching voltage are only 9.4% and 6.7%,and the disturbance coefficient of the resistance state is only 13.7% and 9.4%.

关 键 词：分子共平面性 二维共轭聚合物 给体-受体 阻变均一性 有机忆阻器 

分 类 号：O69[理学—化学] TB34[一般工业技术—材料科学与工程] O633.21