Theoretical analysis on GaAs sub-cell doping concentration for triple-junction solar cells irradiated by proton based on TCAD simulation  

作　　者：LI Junwei JIA Weimin SHI Chengying WANG Zujun LI Zhengcao 

机构地区：[1]Key Lab of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing,100084,China [2]Xi’an Research Institute of High-Technology,Xi’an,710025,China [3]Northwest Institute of Nuclear Technology,Xi’an,710024,China

出　　处：《Optoelectronics Letters》2022年第12期723-729,共7页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.11975135 and 12005017);the National Basic Research Program of China(No.2020YEB1901800)。

摘　　要：The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton, and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design(TCAD) simulation. The degradation results of related electrical parameters and external quantum efficiency(EQE) are studied. The degradation mechanism irradiated by proton is discussed. The short-circuit current, maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration. When the base doping concentration of GaAs sub-cell is 1×1016cm-3, the degradation of short-circuit current is less than that of other base doping concentrations. Furthermore, under proton irradiation, with the increase of doping concentration of GaAs sub-cell, the open-circuit voltage first increases and then decreases. Meanwhile, when the base doping concentration of GaAs sub-cell is 2×10^(17)cm^(-3), the degradation of open-circuit voltage is less than that of other base doping concentrations. The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening, and can provide guidance for the production of triple-junction solar cells in orbit.

关 键 词：DOPING IRRADIATED JUNCTION 

分 类 号：O646[理学—物理化学] TM914.4[理学—化学]