GIS绝缘子的直接氟化与直流闪络性能  

Direct Fluorination and DC Flashover Performance of GIS Spacers

作　　者：相中华 牛勃 马飞越 倪辉 孙景鹏 安振连[3] XIANG Zhonghua;NIU Bo;MA Feiyue;NI Hui;SUN Jingpeng;AN Zhenlian(State Grid Ningxia Electric Power Corporation Research Institute,Yinchuan 750002,China;State Grid Ningxia Electric Power Co.,Ltd.,Yinchuan 750001,China;Department of Electrical Engineering,Tongji University,Shanghai 201804,China)

机构地区：[1]国网宁夏电力有限公司电力科学研究院,银川750002 [2]国网宁夏电力有限公司,银川750001 [3]同济大学电气工程系,上海201804

出　　处：《高电压技术》2022年第11期4306-4315,共10页High Voltage Engineering

基　　金：国网宁夏电力有限公司科技项目(5229DK200057)。

摘　　要：为了研究直接氟化对GIS实际绝缘子直流闪络性能的提升作用,促进其实际应用,在实验室同时氟化处理了126 kV盘式绝缘子及与盘式绝缘子材质相同的环氧样片。环氧样片的氟化是为了评价盘式绝缘子氟化层的物化特征和基本特性。红外分析和扫描电子显微镜观察表明,氟化改变了盘式绝缘子的表面化学组成和结构,形成了厚度为0.36μm的氟化表层。表面基本性能测量显示,氟化使环氧样片和盘式绝缘子的表面电导率提高了两个数量级,明显地加速了其表面电荷衰减,同时增加了其表面亲水性和极性。在0.2 MPa SF_(6)气体中的直流闪络试验揭示,氟化使该盘式绝缘子的直流闪络电压提高了15.5%,同时明显地增强了其耐电弧能力。绝缘子闪络性能的提高主要是氟化对绝缘子表面电荷积聚的抑制作用,其耐电弧能力的增强主要归因于表层中C-F键的形成。In order to study the effectiveness of direct fluorination in improving the DC flashover performance of actual spacers in GIS and to promote its practical applications,126 kV disc spacers and epoxy samples with the same material as the spacers were fluorinated in laboratory.The fluorination of epoxy samples is to conveniently evaluate the physicochemical characteristics and basic properties of the fluorinated layer of the disc spacer.Infrared analysis and scanning electron microscope observation indicate that surface chemical composition and structure of the disc spacer are substantially changed by the fluorination,and the fluorinated surface layer has a thickness of 0.36μm.Measurements of surface basic properties show that the fluorination leads to two orders of magnitude increase in surface conductivity of the epoxy sample and spacer and obviously accelerates its surface charge decay.The fluorination also increases the surface hydrophilicity and polarity of the spacer.DC flashover tests in 0.2 MPa SF_(6) gas reveal that the fluorination increases the DC flashover voltage of the disc spacer by 15.5%,and also obviously enhance the arc resistance of the spacer.The improvement of the DC flashover performance is mainly due to the suppression of surface charge accumulation by the fluorination,and the enhancement of the arc resistance is mainly attributed to the formation of C—F bonds in the surface layer.

关 键 词：真实绝缘子 直接氟化 直流闪络 表面电传导 气体绝缘开关 

分 类 号：TM75[电气工程—电力系统及自动化] TM216[一般工业技术—材料科学与工程]