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作 者:王爱记 田瑜 梁岷川 胡译文 刘明月 廖淑佳 王引书 金魁 王静 张金星 Aiji Wang;Yu Tian;Minchuan Liang;Yiwen Hu;Mingyue Liu;Shujia Liao;Yinshu Wang;Kui Jin;Jing Wang;Jinxing Zhang(Department of Physics,Beijing Normal University,Beijing 100875,China;School of Basic Medicine,Air Force Medical University,Xi’an 710032,China;Advanced Research Institute of Multidisciplinary Science,and School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]Department of Physics,Beijing Normal University,Beijing 100875,China [2]School of Basic Medicine,Air Force Medical University,Xi’an 710032,China [3]Advanced Research Institute of Multidisciplinary Science,and School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China [4]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China
出 处:《Science China Materials》2023年第1期413-418,共6页中国科学(材料科学(英文版)
基 金:supported by the National Key R&D Program of China through Contract 2021YFA0718700;the final support from the National Natural Science Foundation of China(11974052 and 12004036);Beijing Natural Science Foundation(Z190008);the Natural Science Basic Research Program of Shaanxi(2021JQ-332)。
摘 要:理解铁电材料畴结构在低温条件下的翻转行为,对于铁电物理以及其在宽温域的应用都非常重要;然而,目前在低温条件下直接观测介观尺度下的畴翻转仍然面临着巨大的挑战.本论文利用铁酸铋(BiFeO_(3))作为模型来研究3.6–260 K温度范围内的铁电畴翻转行为.菱形相的BiFeO_(3)在温度为130 K时观测到了明显的铁电保持失效现象;这是因为BiFeO_(3)在130 K附近有较大的热释电系数,从而使其升温到该温度附近时释放了大量的热释电电荷,进而产生较强的退极化场,导致铁电极化翻转.另外,本论文还发现通过纳米尺度设计相界可以有效地抑制铁电保持失效.本研究为变温条件下,尤其是低温温域,研究铁电翻转提供了实验范式.Understanding the polarization switching behavior in ferroelectric polarization-based devices is important both for condensed matter physics and potential applications,such as the nonvolatile random-access memories[1–4],ferroelectric fieldeffect transistors[5]and photoelectric devices[6–10].In recent decades,it has also attracted researchers to take great efforts to explore the emergent physical phenomena based on ferroelectric domain switching,including exotic ferroelectric phase transition[11–13],ultrafast domain dynamics[14–16],magneto-electric coupling effect[17–19],and neuromorphic computing[20,21].According to Landau-Ginzburg-Devonshire(LGD)theory,a ferroelectric material is described by a double-well free energy landscape as a function of the polarization orientation[22].However,the asymmetry of the boundary conditions of the surface and interface results in an asymmetric free energy landscape for the polarization states,inducing as-grown stable polarization states and switched metastable polarization states in ferroelectric thin films[22–24].
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