氮化镓功率电子器件上欧姆接触电极研究进展  

作　　者：郑文浩 田野[1,2] 

机构地区：[1]哈尔滨师范大学/光电带隙材料教育部重点实验室,哈尔滨150025 [2]哈尔滨师范大学物理与电子工程学院,哈尔滨150025

出　　处：《科技创新与应用》2023年第4期36-38,42,共4页Technology Innovation and Application

基　　金：国家重点研发计划资助项目(2017YFB0404201);国家自然科学基金资助项目(61774147)。

摘　　要：GaN基功率电子器件已经被应用在电子产品、电气设备和充电器等领域。如何进一步提高现有GaN基功率器件性能是接下来研究的重点。其中,金属/GaN界面上较大的欧姆接触电阻一直是影响器件性能及可靠性的一个问题。该文综述总结近年来在GaN基功率器件结构中的欧姆接触电极及不同类型欧姆接触方案的研究成果。在简要介绍几种典型的功率电子器件结构中的欧姆接触之后,将分别讨论n型GaN、p型GaN、Al GaN/GaN异质结上的欧姆接触,以及对于无金欧姆接触技术的各种尝试和成果。最后,对未来的发展趋势作出展望。GaN-based power electronic devices have been used in electronic products,electrical equipment,chargers and other fields.How to further improve the performance of existing GaN-based power devices is the focus of the next research.Among them,the large ohmic contact resistance on the metal/GaN interface has always been a problem affecting the performance and reliability of the device.This paper summarizes the research results of ohmic contact electrodes and different types of ohmic contact schemes in GaN-based power device structures in recent years.After a brief introduction of ohmic contacts in several typical power electronic device structures,the ohmic contacts on n-type GaN,p-type GaN and Al GaN/GaN heterojunctions,as well as various attempts and achievements of gold-free ohmic contact technology,are discussed respectively.Finally,the future development trend is prospected.

关 键 词：GAN 欧姆接触 功率电子器件 无金欧姆接触 研究进展 

分 类 号：TN386[电子电信—物理电子学]