新型锗源环栅线隧穿晶体管结构设计及优化  

Design and Optimization of the Novel Gate-all-around Line Tunneling FETs with Germanium Source

作　　者：糜昊 马鑫 苗渊浩 芦宾 MI Hao;MA Xin;MIAO Yuanhao;LU Bin(School of Physics and Information Engineering,Shanxi Normal University,Taiyuan,030031,CHN;Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing,100029,CHN)

机构地区：[1]山西师范大学物理与信息工程学院,太原030031 [2]中国科学院,微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《固体电子学研究与进展》2022年第6期441-448,共8页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62004119);山西省应用基础研究计划资助项目(201901D211400)。

摘　　要：设计了一种锗源环栅线隧穿晶体管(GAA-LTFET),并采用TCAD工具对其工作原理进行了分析,通过双栅功函数技术抑制寄生点隧穿机制,消除了转移电流曲线上的驼峰现象,提高器件特性。此外,还针对源区掺杂浓度和沟道厚度等关键参数进行了分析和优化,最终器件平均亚阈值摆幅可达33.4 mV/dec,开态电流可达0.64μA/μm,开关比值约为9×10^(8),该器件的优异特性有望促进后摩尔时代超低功耗技术的发展。A gate-all-around line tunneling field-effect-transistor(GAA-LTFET)with germanium-source was proposed and the working principle was analyzed by the aid of the TCAD tools in detail.The parasitic point tunneling mechanism was suppressed by the dual gate work function technique,which eliminated the current hump on the transfer curve and improved the device characteristics.In addition,the influence of the source doping concentration and the channel thickness are also analyzed and optimized.About 33.4 mV/dec of the average subthreshold swing,0.64μA/μm of the onstate current and about 9×10^(8)of the on/off state ratio are obtained.The excellent characteristics of the proposed novel devices are expected to promote the further development of the ultra-low power applications in the post Moore era.

关 键 词：隧穿场效应晶体管(TFETs) 线隧穿 Ge/Si异质结 环栅 亚阈值摆幅 

分 类 号：TN386[电子电信—物理电子学]