引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性  

Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer

作　　者：刘晓辉 刘景涛 郭颖楠[1] 王颖[1] 郭庆林[1] 梁宝来[1] 王淑芳[1] 傅广生[1] LIU Xiaohui;LIU Jingtao;GUO Yingnan;WANG Ying;GUO Qinglin;LIANG Baolai;WANG Shufang;FU Guangsheng(College of Physics Science and Technology,Hebei University,Baoding 071002,China)

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2023年第1期73-82,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61774053);河北省自然科学基金(F2019201446,F2020201051);河北大学高层次人才项目(8012605)。

摘　　要：在InGaAs/GaAs表面量子点(SQDs)的GaAs势垒层中引入Si掺杂层,以研究Si掺杂对InGaAs/GaAs SQDs光学特性的影响。荧光发光谱(PL)测量结果显示,InGaAs/GaAs SQDs的发光强烈依赖于Si掺杂浓度。随着掺杂浓度的增加,SQDs的PL峰值位置先红移后蓝移;PL峰值能量与激光激发强度的立方根依赖关系由线性向非线性转变;通过组态交互作用方法发现SQDs的PL峰位蓝移减弱;时间分辨荧光光谱显示了从非线性衰减到线性衰减的转变。以上结果说明Si掺杂能够填充InGaAs SQDs的表面态,并且改变表面费米能级钉扎效应和SQDs的荧光辐射特性。本研究为深入理解与InGaAs SQDs的表面敏感特性关联的物理机制和载流子动力学过程,以及扩大InGaAs/GaAs SQDs传感器的应用提供了实验依据。A Si doped interlayer was introduced into the GaAs barrier layer to study optical properties of InGaAs/GaAs surface quantum dots(SQDs).Photoluminescence(PL)measurements show that luminescence of InGaAs/GaAs SQDs is strongly dependent on Si doping concentration.With increasing the Si doping concentration,InGaAs/GaAs SQDs show clearly different luminescence characteristics,including:PL peak position of SQDs shifts to red at first and then to blue;the dependence of PL peak energy on the cubic root of excitation intensity changes from linear to nonlinear;configuration interaction method shows reduced blue shift for PL band;time-resolved PL indicates a transition from nonlinear decay of type-II QDs to linear decay of type-I QDs.These experimental results indicate that Si doping fill the surface states and modify the surface Fermi level pinning effect,thus changing the luminescence characteristics of InGaAs/GaAs SQDs.This research provides a support for understanding and tailing the surface-sensitive characteristics of InGaAs SQDs for development of sensors.

关 键 词：InGaAs量子点 Si掺杂 表面费米能级 荧光发光谱 间接跃迁辐射 时间分辨荧光光谱 

分 类 号：TN304[电子电信—物理电子学]