AlGaN双势垒结构对高In组分InGaN/GaN MQWs太阳能电池材料晶体质量和发光性能的影响  

Influence of AlGaN Double Barrier Structure on Crystal Quality and Luminescent Properties of InGaN/GaN MQWs Solar Cell Materials Containing High Indium Components

作　　者：单恒升 李明慧[1,3] 李诚科 刘胜威 梅云俭 宋一凡 李小亚 SHAN Hengsheng;LI Minghui;LI Chengke;LIU Shengwei;MEI Yunjian;SONG Yifan;LI Xiaoya(Materials Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi’an 710021,China;Key Laboratory of Wide Band-Gap Semiconductor Materials,Ministry of Education,Xidian University,Xi’an 710071,China;School of Materials Science and Engineering,Shaanxi University of Science and Technology,Xi’an 710021,China;School of Information Science and Technology,Northwest University,Xi’an 710127,China)

机构地区：[1]陕西科技大学材料原子·分子科学研究所,西安710021 [2]西安电子科技大学,宽禁带半导体材料教育部重点实验室,西安710071 [3]陕西科技大学材料科学与工程学院,西安710021 [4]西北大学信息科学与技术学院,西安710127

出　　处：《人工晶体学报》2023年第1期83-88,124,共7页Journal of Synthetic Crystals

基　　金：西安电子科技大学宽禁带半导体材料教育部重点实验室开放基金,710071(kdxkf2020-02);国家自然科学基金(61901375);中国博士后科学基金(2019M663950XB);陕西省自然科学基础研究计划(2021JM-384)。

摘　　要：本文利用金属有机化合物化学气相沉积(MOCVD)技术在(001)面图形化蓝宝石衬底(PSS)上生长了一种含有AlGaN-InGaN/GaN MQWs(multiple quantum wells)-AlGaN双势垒结构的高In组分太阳能电池外延材料。高分辨率X射线衍射(HRXRD)和光致发光(PL)谱分析表明,与含有AlGaN电子阻挡层的低In组分的量子阱结构太阳能电池外延材料相比,该结构材料具有较小的半峰全宽(FWHM),计算表明:此结构材料的位错密度降低了一个数量级,达到10^(7)cm^(-2);同时,有源区中的应变弛豫降低了51%;此外,此结构材料的发光强度增强了35%。研究结果表明含有AlGaN双势垒结构的外延材料可以减小有源区的位错密度,降低非辐射复合中心的数目,增大有源区有效光生载流子的数目,为制备高质量太阳能电池提供实验依据。In this paper,a double-barrier structure AlGaN-InGaN/GaN MQWs-AlGaN solar cell materials containing high indium components was grown on(001)-oriented patterned sapphire substrate(PSS)by metal organic chemical vapor deposition(MOCVD)technology.Compared with the MQWs solar cell material containing AlGaN electron barrier structure with low indium,it is found that the material of this structure has a smaller full width at half maximum(FWHM)by high-resolution X-ray diffraction(HRXRD)and photoluminescence(PL)spectroscopy analysis,and the dislocation density of this structural material is also reduced by an order of magnitude to 10^(7)cm^(-2)by the dislocation density formula;at the same time,the strain relaxation in the active region decreases by 51%.In addition,luminous intensity of this structural material is enhanced by 35%.The results show that the epitaxial material containing AlGaN double barrier structure can reduce the dislocation density in the active region,decrease the number of non-radiative recombination centers,and increase the number of effective photo-generated carriers in the active region,which provides experimental basis for the preparation of high efficiency solar cells.

关 键 词：金属有机化合物化学气相沉积 太阳能电池外延材料 AlGaN双势垒结构 InGaN/GaN MQWs 位错密度 光生载流子 

分 类 号：O484[理学—固体物理] TM914.4[理学—物理]