High-response n-butanol gas sensor based on ZnO/In_(2)O_(3) heterostructure  

作　　者：Zhen-Yu Yuan Fan Yang Hong-Min Zhu Fan-Li Meng Medhat Ibrahim 

机构地区：[1]College of Information Science and Engineering,Northeastern University,Shenyang,110819,China [2]Spectroscopy Department,National Research Centre,Giza,12622,Egypt

出　　处：《Rare Metals》2023年第1期198-209,共12页稀有金属（英文版）

基　　金：financially supported by the National R&D Program of China(No.2020YFB2008702);the National Natural Science Foundation of China(Nos.62033002,61833006,62071112 and 61973058);the 111 Project(No.B16009);the Fundamental Research Funds for the Central Universities in China(Nos.N180408018,N2004019 and N2004028);Liaoning Revitalization Talents Program(No.XLYC1807198);Liaoning Province Natural Science Foundation(No.2020-KF-11-04);Hebei Natural Science Foundation(No.F2020501040)。

摘　　要：In this study,ZnO/In_(2)O_(3)-heterostructured nanosheets were prepared using a one-step hydrothermal method.The effects of ZnO content on the gas-sensing performance were discussed,with ZnO/In_(2)O_(3)-2 exhibiting the highest performance among the prepared sensors.The response of ZnO/In_(2)O_(3)-2 to n-butanol was 302 at 26℃,which was 11.93 times higher than that of pure In_(2)O_(3).Among the eight tested gases,ZnO/In_(2)O_(3)-2 displayed the highest response to n-butanol.Moreover,the lower detection limit of the ZnO/In_(2)O_(3)nanosheets was reduced from 10×10^(-6)to 0.1×10^(-6)(for pure In_(2)O_(3)nanosheets)toward n-butanol.This is because the doping of Zn2+increases the number of oxygen vacancies on the sensor surface and allows the formation of an n-n heterostructure between ZnO and In_(2)O_(3),which increases the initial resistance of the sensor.

关 键 词：High-response N-N heterostructure N-BUTANOL Gas sensor 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]