SiH_(4)流量对燃料电池用钛合金板表面PECVD制备C:Si膜组织及耐蚀性的影响  

Influence of SiH_(4)Flow Rate on Microstructure and Corrosion Resistance of C:Si Film Prepared by PECVD on the Surface of Titanium Alloy Plate for Fuel Cell

作　　者：屈涛 张八合[2] QU Tao;ZHANG Ba-he(Shaanxi Coal Chemical Industry Technology Research Institute Co.,Ltd.,Xi′an 710070,China;College of Chemical Engineering,Shaanxi Normal University,Xi′an 710119,China)

机构地区：[1]陕西煤业化工技术研究院有限责任公司,陕西西安710070 [2]陕西师范大学化工学院,陕西西安710119

出　　处：《稀有金属与硬质合金》2022年第6期68-71,98,共5页Rare Metals and Cemented Carbides

基　　金：陕煤联合基金项目(2019JLZ-12)。

摘　　要：采用甲烷作为碳源,利用等离子增强化学气相沉积(PECVD)工艺在电池极板用钛合金板表面制得一层含硅非晶碳(C:Si)膜,对比了通入不同流量的SiH_(4)所制备C:Si膜在导电性、疏水性、耐蚀性、厚度上的差异,深入分析了SiH_(4)流量引起C:Si膜性能变化的机制。结果表明:C:Si膜与基底结合度很好。逐渐增大SiH_(4)流量后,膜层厚度表现出增大趋势,C:Si膜的杂化比值由0.58增大至1.11,G峰的半峰宽由168 cm^(-1)减小为103 cm^(-1),判断SiH_(4)流量升高可诱导C:Si膜发生石墨化转变。通入6 mL/min SiH_(4)制得的C:Si膜具有优异的耐蚀性,极化后在表面形成晶体盐颗粒,并未观察到起皮及微孔缺陷。膜的界面电阻与钛基底相比显著降低,且C:Si膜的疏水性比基底更强,在SiH_(4)流量为6 mL/min下C:Si膜获得了最低界面电阻和最优疏水性。By using methane as the carbon source,a layer of silicon-containing amorphous carbon(C:Si)film was prepared on the surface of titanium alloy plate for cell electrode plate by plasma enhanced chemical vapor deposition(PECVD).The discrepancies in conductivity,hydrophobicity,corrosion resistance,and thickness of the C:Si film prepared by different flow rates of SiH_(4)were compared,and the mechanism of SiH_(4)flow rate causing the change in the properties of C:Si film was analyzed in depth.The results show that the C:Si film bonds well with the substrate.When the SiH_(4)flow rate gradually increases,the film thickness increases.After increasing SiH_(4)flow rate,the hybridization ratio of the C:Si film increases from 0.58 to 1.11,and the half-peak width of G peak decreases from 168 cm^(-1)to 103 cm^(-1).Thus it could be concluded that increasing SiH_(4)flow rate can induce graphitization transition of the C:Si film.The C:Si film prepared by the SiH_(4)flow rate at 6 mL/min has excellent corrosion resistance,and crystalline salt particles are formed on the film surface after polarization with no observation of peeling or micropore defects.The interfacial resistance of the C:Si film is significantly lower than that of the titanium substrate,and the hydrophobicity of the C:Si film is stronger than that of the titanium substrate.The lowest interfacial resistance and optimal hydrophobicity of the C:Si film are obtained at the SiH_(4)flow rate of 6 mL/min.

关 键 词：含硅非晶碳膜 钛合金板 SiH_(4)流量 组织 耐腐蚀性能 电化学性能 燃料电池 

分 类 号：TG178[金属学及工艺—金属表面处理]