基于VO_(2)薄膜的军用激光测距机雪崩二极管防护特性研究  

Research on Avalanche Diode Protection Characteristics of Military Laser Rangefinder Based on VO_(2)Film

作　　者：侯典心 周永超 张胤 方传磊[1] 杜弘扬 HOU Dian-xin;ZHOU Yong-chao;ZHANG Yin;FANG Chuan-lei;DU Hong-yang(Unit 32286 of PLA,Jinan 250000,China)

机构地区：[1]中国人民解放军32286部队,山东济南250000

出　　处：《红外》2023年第1期47-52,共6页Infrared

摘　　要：为实现对军用激光测距机雪崩二极管的有效防护,通过实验的方法测试了VO_(2)薄膜在1064 nm激光辐照下的基本性质,得出了其相变前后透过率与膜厚的关系以及不同厚度VO_(2)薄膜对C30950E雪崩二极管最低饱和入射激光阈值的影响,并给出了拟合公式。实验结果表明,随着膜厚的增加,雪崩二极管的最低饱和入射激光阈值逐渐提高;膜厚为200 nm的VO_(2)薄膜可将雪崩二极管的最低饱和入射激光阈值由5×10^(-6)W提高到1.2×10^(-5)W。由于目前国内针对军用激光测距机雪崩二极管激光防护开展的研究还较少,且大多局限在理论层面、缺乏实验数据支撑,因此本文提供的数据和拟合公式不仅可以进一步验证将VO_(2)薄膜用于军用激光测距机雪崩二极管防护的可行性,而且为进一步开展各型激光测距装备雪崩二极管防护研究提供了数据参考。In order to realize the effective protection of avalanche diode of military laser rangefinder,the basic properties of VO_(2)film under 1064nm laser irradiation are tested,and the relationship between transmittance and film thickness before and after phase transition is obtained.The influence of different thickness of VO_(2)film on the minimum saturation incident laser threshold of C30950E avalanche diode is also obtained,and the fitting formula is given as well.The experimental results show that with the increase of film thickness,the minimum saturation incident laser threshold of avalanche diode increases gradually.The minimum saturation incident laser threshold of avalanche diode can be increased from 5×10^(-6)W to 1.2×10^(-5)W when the film thickness is 200 nm.At present,there are few researches on laser protection of avalanche diode of military laser rangefinder in China,and most of them are limited to the theoretical level and lack experimental data support.Therefore,the feasibility of using VO_(2)thin film for avalanche diode protection of military laser rangefinder can be further verified by the data and fitting formula provided in this paper.The data reference is also provided for further research on avalanche diode protection of various laser ranging equipment.

关 键 词：VO_(2)薄膜 测距机 C30950E雪崩二极管 饱和入射激光阈值 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN249[电子电信—物理电子学]