10 W近衍射极限输出的高效率窄线宽主控振荡放大半导体激光器  

Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power

作　　者：杜维川[1,2] 何林安 李弋[1,2] 贺钰雯 谢鹏飞 周坤 张亮[1,2] 刘晟哲 高松信 唐淳[1,2] DU Wei-Chuan;HE Lin-An;LI Yi;HE Yu-Wen;XIE Peng-Fei;ZHOU Kun;ZHANG Liang;LIU Sheng-Zhe;GAO Song-Xin;TANG Chun(Key Laboratory of Science and Technology on High Energy Lasers,CAEP,Mianyang 621900,China;Institute of Applied Electronics,CAEP,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院高能激光重点实验室,四川绵阳621900 [2]中国工程物理研究院应用电子学研究所,四川绵阳621900

出　　处：《红外与毫米波学报》2023年第1期21-25,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11804322);中国工程物理研究院创新发展基金(C-2020-CX2019035)。

摘　　要：为研制近衍射极限的高功率半导体激光器,采用了片上光栅、窄脊型波导、锥形放大器一体集成的主控放大(Master Oscillator Power-Amplifier,MOPA)技术路线,以长度为8 mm、脊型宽度为3μm的波导为单模种子源,配合长度为7 mm、全角为3.3°的锥形放大器,实现了功率10.3 W、慢轴光束质量M^(2)(1/e^(2))因子=1.06,3 d B线宽40 pm,工作电光效率50.5%的半导体激光输出,并采用片上电致加热光栅调谐技术,实现了中心波长在4 nm范围内连续可调。High-power semiconductor laser with nearly diffraction limited narrowband emission was designed and fabricated.The monolithic master oscillator power-amplifier(MOPA)diode laser consists of distributed Bragg gratings,a narrow ridge waveguide and a tapered amplifier.The ridge waveguide with length of 8 mm and width of 3μm is used as the single-mode seed source.A tapered gain section with length of 7 mm and a full taper angle of 3.3°amplify the seed power.The fabricated device reach an output power of 10.3 W with a slow axis beam quality M^(2)(1/e^(2))factor of 1.06 and an electro-optic efficiency of 50.5%.The spectral linewidth is 40 pm(3 dB),and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.

关 键 词：近衍射极限 MOPA半导激光器 高亮度半导体激光器 窄线宽 

分 类 号：TN3[电子电信—物理电子学]