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作 者:刘星[1] 孟范忠[1] 陈艳 张傲 高建军[3] LIU Xing;MENG Fan-Zhong;CHEN Yan;ZHANG Ao;GAO Jian-Jun(The 13th Research Institute,CETC,Shijiazhuang 050051,China;School of Transportation and Civil Engineering,Nantong University,Nantong 226019,China;School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China)
机构地区:[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]南通大学交通与土木工程学院,江苏南通226019 [3]华东师范大学物理与电子科学学院,上海200241
出 处:《红外与毫米波学报》2023年第1期37-42,共6页Journal of Infrared and Millimeter Waves
基 金:国家自然科学基金项目(62201293,62034003)。
摘 要:基于70 nm InP HEMT工艺,设计了一款五级共源放大级联结构230~250 GHz低噪声太赫兹单片集成电路(TMIC)。该放大器采用扇形线和微带线构成栅极和源极直流偏置网络,用以隔离射频信号和直流偏置信号;基于噪声匹配技术设计了放大器的第一级和第二级,基于功率匹配技术设计了中间两级,最后一级重点完成输出匹配。在片测试结果表明,230~250 GHz频率范围内,低噪声放大器的小信号增益大于20 dB。采用Y因子法对封装后的低噪声放大器模块完成了噪声测试,频率为243~248 GHz时该MMIC放大器噪声系数优于7.5 dB,与HBT和CMOS工艺相比,基于HEMT工艺的低噪声放大器具有3 dB以上的噪声系数优势。Based on the 70 nm InP HEMT process,a 230~250 GHz low noise amplifier terahertz integrated circuit(TMIC)is designed.The amplifier adopts cascade structure of five common-source amplifiers to achieve low noise amplification.Based on the bias network which consists of microstrip radial stub and transmission line to isolate RF signals and DC bias signals.The first and second stages of the amplifier are designed based on noise matching technology,the middle two stages are designed based on power matching technology,and the last stage focuses on output matching.The on-chip test results show that the small signal gain of the LNA is greater than 20 dB in the frequency range of 230~250 GHz.The Y-factor method is used to complete the noise test of the encapsulated low noise amplifier module.The noise figure of the MMIC amplifier is better than 7.5 dB in the frequency range of 243~248 GHz.Compared with HBT and CMOS processes,the low noise amplifier based on HEMT process has a noise figure advantage of more than 3 dB.
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